| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,580 pcs
|
4580 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP15N40 is an N-Channel MOSFET manufactured by On Semiconductor, featuring a drain-to-source voltage rating of 400V and a continuous drain current of 15A at 25°C case temperature. It utilizes Metal Oxide (MOSFET) technology with a maximum on-resistance of 300 mΩ at 7.5A drain current and 10V gate drive. The gate charge is 36 nC at 10V, and the input capacitance is 1750 pF at 25V drain-source voltage. This device is designed for high-voltage switching applications such as power supplies, motor drives, and inverters.
The MOSFET is housed in a TO-220-3 through-hole package, which allows easy mounting on heatsinks for thermal management. Maximum power dissipation is 170W at 25°C case temperature, and the operating junction temperature range is -55°C to 150°C. The gate-source voltage maximum is ±30V. Environmental compliance includes RoHS3, REACH unaffected, and MSL level 1 (unlimited). The part is suitable for designs requiring efficient switching and robust thermal performance.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.65 | $0.65 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
400V
TO-220-3
-55°C to 150°C (junction)
Yes, RoHS3 compliant.
15A at Tc=25°C
36 nC at Vgs=10V
300 mΩ at Id=7.5A, Vgs=10V