| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,842 pcs
|
1842 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
673 pcs
|
673 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
243 pcs
|
243 pcs | On Request | 1 | On Request | On Request | 1441+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET is produced using onsemi's advanced POWERTRENCH process, minimizing on-state resistance while maintaining superior switching performance. Key specifications include 150V drain-source voltage, 130A continuous drain current (package limited to 120A), 7.5 mOhm maximum on-resistance at 10V gate drive, 100 nC gate charge, and 7350 pF input capacitance. Designed for high efficiency in synchronous rectification, battery protection, motor drives, and micro solar inverters. Available in a TO-220-3 through-hole package.
| Qty | Low | High |
|---|---|---|
| 50+ | $3.28 | $3.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
TO-220-3 through-hole package.
-55°C to 175°C junction temperature.
It is listed as RoHS3 Compliant, but this is unverified.
130A at 25°C case temperature, with a package limitation of 120A.
Maximum 7.5 mOhm at 10V gate drive, 100A drain current; typical 6.25 mOhm.
Maximum 100 nC at 10V gate voltage.