FDP060AN08A0 The FDP060AN08A0 is an N-channel power MOSFET from On Semiconductor rated for 75V drain-source voltage and 16A continuous current (80A at case). It features a low 6mΩ on-resistance and comes in a TO-220-3 through-hole package.
Mfr Part #:

FDP060AN08A0

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDP060AN08A0 is an N-channel power MOSFET from On Semiconductor rated for 75V drain-source voltage and 16A continuous current (80A at case). It features a low 6mΩ on-resistance and comes in a TO-220-3 through-hole package.
✓ Total Stock: 12,338 pcs
$ Price Range: $1.37 - $3.94

FDP060AN08A0 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FDP060AN08A0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDP060AN08A0 Description

Short technical summary and product information.

The FDP060AN08A0 is an N-channel power MOSFET manufactured by ON Semiconductor, designed for high-current switching applications. It delivers a maximum drain-to-source voltage of 75 V and supports a continuous drain current of 16 A at 25°C ambient, extending to 80 A when the case temperature is held at 25°C.

 

With a maximum on-resistance of 6 mΩ at a 10 V gate drive and 80 A drain current, the device offers low conduction losses. The maximum gate threshold voltage is 4 V at 250 µA. Drive voltage ranges from 6 V for minimum on-resistance to 10 V for rated operation. Total gate charge is 95 nC and input capacitance is 5150 pF, contributing to efficient switching performance.

 

The device is available in a TO-220-3 through-hole package, well suited for power dissipation with an appropriate heat sink. Maximum power dissipation is 255 W at 25°C case temperature, and the junction operating temperature range is -55°C to 175°C. The MOSFET uses metal-oxide semiconductor technology.

FDP060AN08A0 Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel Power MOSFET 75V 16A/80A TO-220-3
Subcategory: Single MOSFET

FDP060AN08A0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDP060AN08A0 Estimated Pricing

Qty Low High
1+ $3.94 $3.94
10+ $2.01 $2.01
100+ $1.81 $1.81
500+ $1.48 $1.48
1,000+ $1.43 $1.43
2,500+ $1.37 $1.37

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDP060AN08A0 Features

  • N-channel power MOSFET for high-current switching.
  • Maximum drain-source voltage of 75 V.
  • Continuous drain current of 16 A at 25°C.
  • 80 A drain current at 25°C case temperature.
  • Low on-resistance of 6 mΩ maximum.

FDP060AN08A0 Applications

  • Suitable for switch-mode power supply designs.
  • Used in DC-DC converter circuits.
  • Handles motor drive and inverter loads.
  • Common in high-power switching applications.

FDP060AN08A0 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDP060AN08A0?

The maximum drain-to-source voltage is 75 V.

What is the package type for the FDP060AN08A0?

The device is available in a TO-220-3 through-hole package.

What is the operating temperature range of the FDP060AN08A0?

The junction temperature range is -55°C to 175°C.

Is the FDP060AN08A0 RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified.

What is the continuous drain current rating of the FDP060AN08A0?

The continuous drain current is 16 A at 25°C ambient and 80 A at 25°C case temperature.

What is the maximum on-resistance of the FDP060AN08A0?

The maximum on-resistance is 6 mΩ at Vgs = 10 V and Id = 80 A.

What is the maximum power dissipation of the FDP060AN08A0?

The maximum power dissipation is 255 W at a case temperature of 25°C.

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