FDP050AN06A0 N-Channel power MOSFET from On Semiconductor with 60V drain-source voltage rating and 80A continuous drain current. Features ultra-low 5mOhm on-resistance in a through-hole TO-220-3 package.
Mfr Part #:

FDP050AN06A0

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel power MOSFET from On Semiconductor with 60V drain-source voltage rating and 80A continuous drain current. Features ultra-low 5mOhm on-resistance in a through-hole TO-220-3 package.
✓ Total Stock: 1,125 pcs
$ Price Range: $1.68 - $3.69

FDP050AN06A0 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
125 pcs
125 pcs On Request 1 On Request On Request 03+ On Request On Request

FDP050AN06A0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDP050AN06A0 Description

Short technical summary and product information.

The FDP050AN06A0 is an N-Channel power MOSFET manufactured by On Semiconductor (onsemi). It is designed for high-efficiency power conversion applications requiring a 60V drain-to-source voltage rating and a continuous drain current of 80A at the case temperature (Tc). The device features an extremely low maximum on-resistance of just 5mOhm when driven with a 10V gate-source voltage, enabling high current handling with minimal conduction losses.

 

Key electrical characteristics include a maximum gate charge of 80nC at 10V and an input capacitance of 3900pF at 25V drain-source voltage. The gate threshold voltage is specified at a maximum of 4V with 250µA drain current, and the device can be driven with gate-source voltages up to ±20V. The recommended drive voltage for achieving minimum on-resistance is 6V, with maximum on-resistance specified at 10V drive.

 

The MOSFET is housed in a standard through-hole TO-220-3 package, which provides excellent thermal performance with a maximum power dissipation of 245W at the case. It operates over a junction temperature range of -55°C to 175°C, making it suitable for demanding industrial and automotive environments. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited).

FDP050AN06A0 Quick Information

Product Type: Power MOSFET
Series: PowerTrench
Canonical Name: FDP050AN06A0 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

FDP050AN06A0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDP050AN06A0 Estimated Pricing

Qty Low High
1+ $3.69 $3.69
10+ $1.87 $1.87
100+ $1.68 $1.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDP050AN06A0 Features

  • N-Channel power MOSFET with 60V drain-source voltage.
  • Continuous drain current rating of 80A at case temperature.
  • Ultra-low 5mOhm maximum on-resistance at 10V gate drive.
  • Through-hole TO-220-3 package for easy mounting.
  • Wide operating temperature range from -55°C to 175°C.

FDP050AN06A0 Applications

  • Ideal for high-efficiency DC-DC converter designs.
  • Suitable for synchronous rectification circuits.
  • Used in motor drive and power management systems.
  • Applicable for battery protection and load switching.

FDP050AN06A0 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the FDP050AN06A0?

The maximum drain-source voltage (Vdss) is 60V.

What is the continuous drain current rating of this MOSFET?

The continuous drain current is 18A at ambient temperature (Ta) and 80A at case temperature (Tc).

What is the on-resistance of the FDP050AN06A0?

The maximum drain-source on-resistance is 5mOhm at a drain current of 80A and gate-source voltage of 10V.

What package type does the FDP050AN06A0 use?

It uses a through-hole TO-220-3 package.

What is the operating temperature range for this device?

The operating junction temperature range is -55°C to 175°C.

Is the FDP050AN06A0 RoHS compliant?

Yes, it is listed as RoHS3 compliant, though this information is unverified.

What is the maximum gate charge of this MOSFET?

The maximum gate charge at 10V gate-source voltage is 80nC.

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