| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | 2010 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP047N08 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power switching applications, offering a drain-to-source voltage (Vdss) of 75V and a continuous drain current (Id) of 164A at 25°C case temperature. The device features a maximum on-resistance (Rds(on)) of 4.7mOhm at a gate drive voltage of 10V and a drain current of 80A, enabling low conduction losses.
This MOSFET utilizes advanced MOSFET technology and provides a maximum gate charge (Qg) of 152nC at Vgs=10V, and an input capacitance (Ciss) of 9415pF at Vds=25V. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at Id=250µA. The device can dissipate up to 268W of power at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C.
The FDP047N08 is supplied in a TO-220-3 through-hole package, suitable for PCB mounting with standard soldering processes. It is commonly used in power supplies, DC-DC converters, motor drives, and other applications requiring high current handling and low on-resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.53 | $4.53 |
| 10+ | $2.34 | $2.34 |
| 100+ | $2.12 | $2.12 |
| 500+ | $1.73 | $1.73 |
| 1,000+ | $1.60 | $1.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
75V.
164A at 25°C case temperature.
Maximum 4.7mOhm at Id=80A, Vgs=10V.
TO-220-3 through-hole package.
-55°C to 175°C junction temperature.
RoHS3 compliant per existing database, but unverified.
Maximum 152nC at Vgs=10V.