| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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235 pcs
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235 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP047AN08A0 from ON Semiconductor is an N-channel PowerTrench MOSFET designed for high-efficiency power switching. It is rated for a maximum drain-to-source voltage of 75 V and a continuous drain current of 80 A when the case temperature is below 144°C (VGS = 10 V). The device has a maximum on-resistance of 4.7 mΩ at ID = 80 A and VGS = 10 V, with a typical value of 4.0 mΩ, and supports gate drive voltages of 6 V or 10 V.
With a typical total gate charge of 92 nC at VGS = 10 V and a maximum input capacitance of 6600 pF at VDS = 25 V, the FDP047AN08A0 is suited for high-frequency switching applications such as synchronous rectification and battery protection. The device can dissipate up to 310 W at TC = 25°C and operates over a junction temperature range of -55°C to +175°C. The maximum gate-to-source voltage is ±20 V, and the gate threshold voltage is 4 V maximum at ID = 250 µA. For applications limited by junction-to-ambient thermal resistance (62°C/W), the continuous drain current is 15 A at a case temperature of 25°C.
The MOSFET is supplied in a through-hole TO-220-3 package, which is also the supplier device package. It is Pb-free and RoHS compliant. Typical applications include synchronous rectification in ATX, server, and telecom power supplies, battery protection circuits, motor drives, and uninterruptible power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.58 | $4.58 |
| 10+ | $2.37 | $2.37 |
| 100+ | $2.14 | $2.14 |
| 500+ | $1.98 | $1.98 |
| 1,000+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDSS) is 75 V.
The FDP047AN08A0 is in a through-hole TO-220-3 package (supplier device package TO-220-3).
-55°C to +175°C.
Yes, the datasheet states the device is Pb-Free and RoHS Compliant.
The maximum RDS(on) is 4.7 mΩ at ID = 80 A and VGS = 10 V, with a typical value of 4.0 mΩ.
Total gate charge is typically 92 nC and maximum 138 nC at VGS = 10 V.
It is rated for 80 A continuous drain current at TC < 144°C with VGS = 10 V, and 15 A continuous at TC = 25°C with RθJA = 62°C/W.