| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
186,400 pcs
|
186400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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This N-Channel MOSFET is produced using onsemi's advanced POWERTRENCH process, designed to minimize on-state resistance while maintaining superior switching performance.
Key electrical specifications include a drain-source voltage of 100V, continuous drain current of 120A (package limited; silicon limited to 164A), pulsed drain current of 656A, maximum on-resistance of 4.5mOhm at 10V gate drive, gate charge of 74nC max, and input capacitance of 5270pF at 50V.
Applications include synchronous rectification in ATX/server/telecom power supplies, battery protection circuits, motor drives, uninterruptible power supplies, and micro solar inverters.
The device is packaged in a TO-220-3 through-hole package, supplied in tubes of 50, with an operating temperature range of -55°C to 175°C. It is RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.22 | $5.22 |
| 10+ | $2.78 | $2.78 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 V.
TO-220-3, through-hole mounting.
-55°C to 175°C (junction).
Yes, RoHS3 compliant per datasheet.
120 A at 25°C (package limited); silicon limited to 164 A.
3.8 mOhm typical at Vgs=10V, Id=100A; maximum 4.5 mOhm.
74 nC maximum at Vgs=10V; typical 54 nC.