| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP039N08B-F102 is an N-Channel MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage (Vdss) of 80V and a continuous drain current of 120A at case temperature (Tc). The device has a maximum drain-source on-resistance of 3.9 mOhm at 100A and 10V gate drive. The gate charge is 133 nC at 10V, and input capacitance is 9450 pF at 40V Vds. Maximum power dissipation is 214W at case temperature. The operating junction temperature range is -55°C to 175°C.
This MOSFET uses metal-oxide semiconductor technology and is designed for through-hole mounting in a TO-220-3 package. The standard gate drive voltage is 10V, with a maximum gate-source voltage of ±20V and a threshold voltage of 4.5V at 250µA. The device is suitable for high-power switching applications such as power supplies, motor control, and DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.09 | $10.09 |
| 10+ | $6.91 | $6.91 |
| 100+ | $5.26 | $5.26 |
| 500+ | $4.94 | $4.94 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
TO-220-3 through-hole package.
-55°C to 175°C (junction).
RoHS3 compliant (unverified).
120A at case temperature.
3.9 mOhm maximum at 100A, 10V.
133 nC at 10V.