FDP032N08B-F102 N-Channel MOSFET rated for 80V drain-source voltage and 120A continuous drain current. Features low on-resistance of 3.3mOhm at 10V gate drive in a TO-220-3 through-hole package.
Mfr Part #:

FDP032N08B-F102

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 80V drain-source voltage and 120A continuous drain current. Features low on-resistance of 3.3mOhm at 10V gate drive in a TO-220-3 through-hole package.
✓ Total Stock: 6,669 pcs
$ Price Range: $2.01 - $3.93

FDP032N08B-F102 Available from 3 distributors

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1,669 pcs
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FDP032N08B-F102 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDP032N08B-F102 Description

Short technical summary and product information.

The FDP032N08B-F102 is an N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for high-current switching applications with a drain-source voltage rating of 80V and a continuous drain current of 120A (at Tc). The device features a low maximum on-resistance of 3.3mOhm at 100A drain current and 10V gate drive, enabling efficient power conversion.

 

The MOSFET utilizes standard MOSFET (Metal Oxide) technology and requires a gate drive voltage of 10V for optimal Rds(on). The maximum gate threshold voltage is 4.5V at 250µA drain current, and the gate-source voltage is limited to ±20V. The device has a maximum gate charge of 144nC at 10V and an input capacitance of 10965pF at 40V drain-source voltage, which are important for switching speed considerations.

 

The FDP032N08B-F102 is housed in a TO-220-3 through-hole package, suitable for mounting on heatsinks for thermal management. The maximum power dissipation is 263W (at Tc), and the operating junction temperature range is -55°C to 175°C. This makes it suitable for demanding power electronics applications such as motor drives, power supplies, and DC-DC converters.

FDP032N08B-F102 Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel MOSFET, 80V, 120A, TO-220-3
Subcategory: N-Channel MOSFET

FDP032N08B-F102 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDP032N08B-F102 Estimated Pricing

Qty Low High
1+ $3.93 $3.93
10+ $2.01 $2.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDP032N08B-F102 Features

  • N-Channel MOSFET with 80V drain-source voltage.
  • 120A continuous drain current capability.
  • Low on-resistance of 3.3mOhm maximum.
  • Through-hole TO-220-3 package for easy mounting.
  • Wide operating temperature range -55°C to 175°C.

FDP032N08B-F102 Applications

  • High-current power switching applications.
  • DC-DC converter and power supply designs.
  • Motor drive and inverter circuits.
  • Battery protection and management systems.

FDP032N08B-F102 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDP032N08B-F102?

The drain-source voltage rating is 80V.

What package type is the FDP032N08B-F102 available in?

It is available in a TO-220-3 through-hole package.

What is the operating temperature range of the FDP032N08B-F102?

The operating temperature range is -55°C to 175°C (junction temperature).

Is the FDP032N08B-F102 RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified.

What is the maximum drain current of the FDP032N08B-F102?

The maximum continuous drain current is 120A at Tc.

What is the on-resistance of the FDP032N08B-F102?

The maximum on-resistance is 3.3mOhm at Vgs=10V and Id=100A.

What is the gate charge of the FDP032N08B-F102?

The maximum gate charge is 144nC at Vgs=10V.

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