| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP030N06B-F102 is an N-Channel power MOSFET manufactured by ON Semiconductor, designed for high-current switching applications with a 60V drain-source breakdown voltage and 120A continuous drain current capability.
This MOSFET features a maximum on-resistance of 3.1mOhm at 100A drain current and 10V gate drive, enabling low conduction losses. The gate charge is 99nC at 10V, and input capacitance is 8030pF at 30V drain-source voltage. The threshold voltage is 4V at 250µA drain current.
The device is housed in a through-hole TO-220-3 package, rated for power dissipation up to 205W at case temperature 25°C. Operating junction temperature range is -55°C to 175°C.
Typical applications include power supplies, DC-DC converters, motor control, and other high-efficiency switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.21 | $3.21 |
| 10+ | $1.61 | $1.61 |
| 100+ | $1.45 | $1.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60 V.
It is available in a through-hole TO-220-3 package.
The operating junction temperature range is -55°C to 175°C.
RoHS3 compliant per existing data, though unverified.
120A at 25°C case temperature.
Maximum 4V at 250µA drain current.
Maximum 3.1mOhm at 100A, 10V gate drive.