| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP020N06B-F102 is an N-Channel power MOSFET from ON Semiconductor, designed for high-efficiency power switching applications. It features a drain-source voltage rating of 60V and a continuous drain current of 120A at case temperature. The device offers a low maximum on-resistance of 2mOhm at 100A and 10V gate drive, minimizing conduction losses.
With a maximum gate charge of 268nC and input capacitance of 20930pF, the MOSFET is suitable for moderate-speed switching in DC-DC converters, motor drives, and power management circuits. The gate threshold voltage is 4.5V maximum at 250µA, and the maximum gate-source voltage is ±20V.
The device is housed in a through-hole TO-220-3 package, allowing easy mounting on heatsinks for thermal management. It can dissipate up to 333W at case temperature and operates over a junction temperature range of -55°C to 175°C. The part is listed as RoHS3 compliant, REACH unaffected, and MSL level 1 (unverified).
| Qty | Low | High |
|---|---|---|
| 1+ | $7.08 | $7.08 |
| 10+ | $3.80 | $3.80 |
| 100+ | $3.48 | $3.48 |
| 500+ | $2.92 | $2.92 |
| 1,000+ | $2.91 | $2.91 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device is housed in a through-hole TO-220-3 package.
The junction temperature range is -55°C to 175°C.
It is listed as RoHS3 compliant, but this is unverified.
The maximum drain-source voltage is 60V.
The continuous drain current is 120A at case temperature.
The maximum on-resistance is 2mOhm at 100A drain current and 10V gate drive.
The maximum gate threshold voltage is 4.5V at 250µA drain current.