FDN86501LZ N-Channel MOSFET with 60V drain-source voltage rating and 2.6A continuous drain current. Features low on-resistance of 116mΩ at 10V gate drive.
Mfr Part #:

FDN86501LZ

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 60V drain-source voltage rating and 2.6A continuous drain current. Features low on-resistance of 116mΩ at 10V gate drive.
✓ Total Stock: 14,156 pcs
$ Price Range: $1.08 - $3.11

FDN86501LZ Available from 1 distributor

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✓ Non-Authorised
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FDN86501LZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDN86501LZ Description

Short technical summary and product information.

The FDN86501LZ is an N-Channel MOSFET manufactured by On Semiconductor using advanced POWERTRENCH Shielded Gate technology. This device is designed for efficient power switching applications requiring low on-resistance and high current handling capability.

 

Key electrical specifications include a maximum drain-to-source voltage (VDS) of 60V, continuous drain current (ID) of 2.6A at 25°C ambient, and pulsed drain current capability up to 24A. The on-resistance is typically 116mΩ maximum at VGS=10V and ID=2.6A, and 173mΩ maximum at VGS=4.5V and ID=2.1A. The gate threshold voltage ranges from 1.0V to 2.4V at ID=250µA.

 

The device is housed in a surface-mount SOT-23 package (TO-236-3, SC-59, SOT-23-3) with gull wing terminals, making it suitable for compact PCB designs. It operates over a junction temperature range of -55°C to 150°C and features a maximum power dissipation of 1.5W at 25°C ambient.

 

This MOSFET is RoHS compliant, Pb-Free, and Halide Free. It is suitable for applications such as primary DC-DC converters and load switches.

FDN86501LZ Quick Information

Product Type: MOSFET
Series: FDN86501LZ
Canonical Name: FDN86501LZ N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDN86501LZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

FDN86501LZ Estimated Pricing

Qty Low High
1+ $3.11 $3.11
10+ $2.02 $2.02
100+ $1.40 $1.40
500+ $1.17 $1.17
1,000+ $1.08 $1.08
3,000+ $1.08 $1.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDN86501LZ Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • Low on-resistance of 116mΩ at 10V gate drive.
  • Continuous drain current rating of 2.6A.
  • Shielded Gate POWERTRENCH technology for fast switching.
  • RoHS compliant, Pb-Free and Halide Free.

FDN86501LZ Applications

  • Primary switch in DC-DC converter circuits.
  • Load switch for power management systems.
  • General purpose low-voltage power switching.

FDN86501LZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (VDS) of the FDN86501LZ?

The maximum drain-source voltage (VDS) is 60V.

What is the continuous drain current rating of the FDN86501LZ?

The continuous drain current (ID) is 2.6A at 25°C ambient temperature.

What is the on-resistance (RDS(on)) of the FDN86501LZ?

The maximum RDS(on) is 116mΩ at VGS=10V and ID=2.6A, and 173mΩ at VGS=4.5V and ID=2.1A.

What package is the FDN86501LZ available in?

The FDN86501LZ is available in a surface-mount SOT-23 package (TO-236-3, SC-59, SOT-23-3).

What is the operating temperature range of the FDN86501LZ?

The operating junction temperature range is -55°C to 150°C.

Is the FDN86501LZ RoHS compliant?

Yes, the FDN86501LZ is RoHS compliant, Pb-Free, and Halide Free as per the datasheet.

What is the gate threshold voltage (VGS(th)) of the FDN86501LZ?

The gate threshold voltage ranges from 1.0V (minimum) to 2.4V (maximum) at ID=250µA, with a typical value of 1.9V.

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