FDN86265P FDN86265P is a P-Channel MOSFET from On Semiconductor, rated for -150V drain-source voltage and -0.8A continuous drain current. It features low on-resistance of 1.2Ω and is available in a SOT-23-3 surface mount package.
Mfr Part #:

FDN86265P

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDN86265P is a P-Channel MOSFET from On Semiconductor, rated for -150V drain-source voltage and -0.8A continuous drain current. It features low on-resistance of 1.2Ω and is available in a SOT-23-3 surface mount package.
✓ Total Stock: 4,979 pcs
$ Price Range: $0.51 - $1.93

FDN86265P Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FDN86265P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDN86265P Description

Short technical summary and product information.

The FDN86265P is a P-Channel MOSFET manufactured by On Semiconductor (onsemi) using the advanced POWERTRENCH process. It is designed for fast switching and load switch applications. Key specifications include a maximum drain-source voltage of -150V, continuous drain current of -0.8A at 25°C, and a gate threshold voltage of -2V to -4V. The on-resistance is 1.2Ω maximum at VGS = -10V, ID = -0.8A, and 1.4Ω maximum at VGS = -6V, ID = -0.7A. The device is 100% UIL tested and has ESD ratings of HBM Class 0B and CDM Class C3. It is offered in a SOT-23-3 surface mount package with a power dissipation of 1.5W at 25°C (Note 1a). The gate charge is 4.1nC maximum, and input capacitance is 210pF maximum. Applications include active clamp switching and load switching.

FDN86265P Quick Information

Product Type: MOSFET - P-Channel
Series: POWERTRENCH
Canonical Name: FDN86265P - On Semiconductor - P-Channel MOSFET, -150V, -0.8A, SOT-23-3
Subcategory: P-Channel MOSFET

FDN86265P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDN86265P Estimated Pricing

Qty Low High
1+ $1.93 $1.93
10+ $1.21 $1.21
100+ $0.80 $0.80
500+ $0.63 $0.63
1,000+ $0.56 $0.56
3,000+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDN86265P Features

  • Low on-resistance of 1.2Ω at -10V gate drive.
  • Optimized for fast switching and load switch applications.
  • 100% UIL tested for reliability.
  • Pb-free, Halide free, and RoHS compliant.
  • ESD ratings: HBM Class 0B, CDM Class C3.

FDN86265P Applications

  • Ideal for active clamp switching applications.
  • Suitable for load switch applications.
  • Used in fast switching circuits.

FDN86265P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDN86265P?

The maximum drain-source voltage is -150 V.

What package is the FDN86265P available in?

It is available in a SOT-23-3 (TO-236-3) surface mount package.

What is the operating temperature range of the FDN86265P?

The operating junction temperature range is -55°C to 150°C.

Is the FDN86265P RoHS compliant?

Yes, it is RoHS compliant, Pb-free, and Halide free.

What is the on-resistance of the FDN86265P?

The maximum on-resistance is 1.2 Ω at VGS = -10 V, ID = -0.8 A, and 1.4 Ω at VGS = -6 V, ID = -0.7 A.

What is the gate threshold voltage of the FDN86265P?

The gate threshold voltage is -2 V minimum, -3.3 V typical, and -4 V maximum at ID = -250 µA.

What is the maximum drain current of the FDN86265P?

The maximum continuous drain current is -0.8 A at 25°C, and pulsed drain current is -5 A.

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