| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
3,472 pcs
|
3472 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,472 pcs
|
3472 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,378 pcs
|
2378 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
123 pcs
|
123 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDN86246 is an N-Channel MOSFET manufactured by onsemi using the advanced PowerTrench process, optimized for low on-resistance, switching performance, and ruggedness. It is rated for a maximum drain-to-source voltage of 150V and a continuous drain current of 1.6A at ambient temperature, with a pulsed drain current capability of 6A.
Key electrical characteristics include a maximum drain-source on-resistance of 261mΩ at VGS=10V and ID=1.6A, and 359mΩ at VGS=6V and ID=1.4A. The gate threshold voltage ranges from 2V minimum to 4V maximum, with a typical value of 3.4V. The device features low input capacitance of 225pF at VDS=75V and low gate charge of 5nC at VGS=10V, contributing to fast switching speeds.
The FDN86246 is housed in a SOT-23-3 (TO-236-3, SC-59) surface-mount package, offering high power and current handling capability in a widely used compact form factor. It operates over a junction temperature range of -55°C to +150°C, with a maximum power dissipation of 1.5W at ambient temperature. Thermal resistance is 80°C/W junction-to-ambient and 75°C/W junction-to-case.
This MOSFET is 100% UIL tested and is Pb-Free, Halide Free, and RoHS compliant. It is suitable for applications such as PD switches and other power management circuits requiring high voltage and low on-resistance in a small surface-mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.21 | $2.21 |
| 10+ | $1.40 | $1.40 |
| 100+ | $0.95 | $0.95 |
| 500+ | $0.77 | $0.77 |
| 3,000+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDS) is 150V.
The continuous drain current is 1.6A at ambient temperature (Ta). The pulsed drain current is 6A.
The maximum Rds(on) is 261mΩ at VGS=10V and ID=1.6A, and 359mΩ at VGS=6V and ID=1.4A.
The junction operating temperature range is -55°C to +150°C.
The FDN86246 is available in a SOT-23-3 surface-mount package (also known as TO-236-3 or SC-59).
Yes, the FDN86246 is RoHS3 compliant and Pb-Free, Halide Free per the datasheet.
The gate threshold voltage (Vgs(th)) ranges from 2V minimum to 4V maximum, with a typical value of 3.4V at ID=250µA.