| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,864 pcs
|
16864 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,209 pcs
|
3209 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDN5632N-F085 is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for low-voltage switching applications requiring a drain-source voltage of 60V and continuous drain current of 1.7A at ambient temperature. The device utilizes MOSFET technology with a maximum on-resistance of 82 mΩ at 10V gate drive, ensuring efficient power handling.
Key electrical characteristics include a gate threshold voltage of 3V maximum, a maximum gate-source voltage of ±20V, input capacitance of 475 pF at 15V Vds, and total gate charge of 12 nC at 10V. The maximum power dissipation is 1.1W at ambient temperature, and the operating junction temperature range is -55°C to 150°C.
The MOSFET is offered in a SOT-23-3 surface-mount package (also known as TO-236-3 or SC-59), making it suitable for compact PCB designs. It is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.19 | $1.19 |
| 10+ | $0.73 | $0.73 |
| 100+ | $0.48 | $0.48 |
| 500+ | $0.36 | $0.36 |
| 1,000+ | $0.33 | $0.33 |
| 3,000+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The device is available in a SOT-23-3 surface-mount package, also known as TO-236-3 or SC-59.
The operating junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 compliant (unverified).
The maximum continuous drain current is 1.7A at ambient temperature.
The maximum on-resistance is 82 mΩ at 1.7A and 10V gate drive.
The maximum gate threshold voltage is 3V at 250µA drain current.