| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDN5618P_G is a P-Channel enhancement-mode MOSFET manufactured by onsemi. It is designed for general-purpose switching and load management applications. The device features a maximum drain-to-source voltage of 60V and a continuous drain current of 1.25A at 25°C ambient temperature.
Key electrical characteristics include a low on-resistance of 170mOhm maximum at Vgs=10V and Id=1.25A, and a gate threshold voltage of 3V maximum at Id=250µA. The device requires a gate drive voltage of 4.5V or 10V for optimal performance. Input capacitance is 430pF at Vds=30V, and total gate charge is 13.8nC at Vgs=10V, enabling efficient switching in moderate-speed circuits.
The MOSFET is housed in a compact SOT-23-3 surface-mount package, also known as TO-236-3 or SC-59. It supports an operating junction temperature range of -55°C to 150°C and has a maximum power dissipation of 500mW at ambient temperature. The device is suitable for space-constrained designs requiring P-Channel switching.
60V.
SOT-23-3 (also known as TO-236-3, SC-59).
-55°C to 150°C (junction).
It is listed as RoHS3 Compliant, but this is unverified.
1.25A at 25°C ambient.
170mOhm maximum at Vgs=10V and Id=1.25A.
4.5V or 10V.