| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
86,208 pcs
|
86208 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
40,020 pcs
|
40020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,149 pcs
|
8149 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,820 pcs
|
1820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
865 pcs
|
865 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
124 pcs
|
124 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDN360P is a P-Channel Logic Level MOSFET produced using onsemi's advanced POWERTRENCH process, designed to minimize on-state resistance while maintaining low gate charge for superior switching performance. It is rated for a drain-source voltage of 30V and a continuous drain current of 2A, with a pulsed drain current of 10A. The device features low on-resistance of 80mΩ at Vgs = -10V and 125mΩ at Vgs = -4.5V, making it suitable for low voltage and battery-powered applications where low in-line power loss and fast switching are required.
The gate threshold voltage is typically -1.9V with a maximum of 3V at Id = -250μA. The maximum gate charge is 9nC at Vgs = 10V, with a typical value of 6.2nC. Input capacitance is 298pF at Vds = 15V. The device is capable of handling up to 500mW power dissipation at 25°C ambient, with a junction-to-ambient thermal resistance of 250°C/W. The operating junction temperature range is -55°C to 150°C.
The FDN360P is housed in a surface mount SOT-23-3 package (also known as TO-236-3, SC-59), which offers 30% higher power handling capability compared to the standard SOT-23 package. It is provided in tape and reel packaging with 3000 units per reel. The device is Pb-Free and RoHS compliant, making it suitable for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.15 | $1.15 |
| 10+ | $0.79 | $0.79 |
| 100+ | $0.50 | $0.50 |
| 500+ | $0.31 | $0.31 |
| 1,000+ | $0.23 | $0.23 |
| 3,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 30 V.
The FDN360P is available in the SOT-23-3 surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the FDN360P is RoHS3 compliant as per the datasheet.
The gate threshold voltage (Vgs(th)) is typically -1.9V and maximum 3V at Id=-250μA.
The continuous drain current is 2A, with a pulsed drain current of 10A.
The maximum power dissipation is 500mW (0.5W) at 25°C ambient.