FDN359BN N-Channel MOSFET, 30V drain-source voltage, 2.7A continuous drain current, SOT-23-3 surface mount package.
Mfr Part #:

FDN359BN

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 30V drain-source voltage, 2.7A continuous drain current, SOT-23-3 surface mount package.
✓ Total Stock: 1,245 pcs
$ Price Range: $0.15 - $0.71

FDN359BN Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
960 pcs
960 pcs On Request 1 On Request On Request 15+ On Request On Request
Non-Authorised Inventory information
285 pcs
285 pcs On Request 1 On Request On Request On Request On Request On Request

FDN359BN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDN359BN Description

Short technical summary and product information.

The FDN359BN is an N-Channel Logic Level MOSFET from On Semiconductor, manufactured using the advanced POWERTRENCH process. It is designed for low voltage and battery powered applications where low in-line power loss and fast switching are required.

 

Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 2.7A, and pulsed drain current up to 15A. The on-resistance is typically 0.026 ohm at VGS=10V (max 0.046 ohm) and 0.032 ohm at VGS=4.5V (max 0.060 ohm). Gate threshold voltage ranges from 1V to 3V with a typical value of 1.8V. The device features low gate charge (5 nC typical) and fast switching performance.

 

The FDN359BN is housed in a SOT-23-3 (SuperSOT-23) surface mount package, offering 30% higher power handling capability compared to standard SOT-23. It is Pb-free and Halide free. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 500 mW at ambient temperature.

FDN359BN Quick Information

Product Type: MOSFET
Canonical Name: FDN359BN N-Channel MOSFET, 30V, 2.7A, SOT-23-3
Subcategory: N-Channel MOSFET

FDN359BN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDN359BN Estimated Pricing

Qty Low High
1+ $0.71 $0.71
10+ $0.44 $0.44
100+ $0.29 $0.29
500+ $0.22 $0.22
1,000+ $0.20 $0.20
3,000+ $0.17 $0.17
6,000+ $0.15 $0.15
24,000+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDN359BN Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 2.7A continuous drain current rating.
  • Low on-resistance: 0.046 ohm at 10V.
  • Logic level gate drive (4.5V compatible).
  • Pb-free and Halide free package.

FDN359BN Applications

  • Low voltage power management circuits.
  • Battery powered portable devices.
  • Load switching and DC-DC converters.
  • Logic level switching applications.

FDN359BN FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDN359BN?

30V.

What package does the FDN359BN come in?

SOT-23-3 (SuperSOT-23) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FDN359BN RoHS compliant?

RoHS3 compliant (unverified), Pb-free and Halide free per datasheet.

What is the typical gate threshold voltage?

1.8V typical, with a range of 1V to 3V.

What is the on-resistance at 10V gate drive?

0.046 ohm maximum, 0.026 ohm typical.

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