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FDN359AN N-Channel MOSFET, 30V drain-source voltage, 2.7A continuous drain current, surface mount SOT-23-3 package.
Mfr Part #:

FDN359AN

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 30V drain-source voltage, 2.7A continuous drain current, surface mount SOT-23-3 package.
✓ Total Stock: 50,519 pcs
$ Price Range: $0.24 - $0.80

FDN359AN Available from 7 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDN359AN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDN359AN Description

Short technical summary and product information.

The FDN359AN is an N-Channel Logic Level MOSFET produced using onsemi's advanced POWERTRENCH process. It is designed to minimize on-state resistance while maintaining superior switching performance. The device features a maximum drain-source voltage of 30 V and a continuous drain current of 2.7 A at 25°C ambient. On-resistance is typically 37 mΩ at Vgs=10V and 60 mΩ at Vgs=4.5V, with a maximum of 46 mΩ at 10V. Gate charge is typically 5 nC, enabling fast switching in low voltage applications.

 

The MOSFET is housed in a surface mount SOT-23-3 package, which offers 30% higher power handling compared to the industry standard SOT-23. It is rated for operation from -55°C to 150°C junction temperature. The device is Pb-Free and Halide Free, making it suitable for environmentally sensitive designs. Typical applications include battery-powered circuits, power management, load switching, and DC-DC converters where low in-line power loss and fast switching are required.

FDN359AN Quick Information

Product Type: MOSFET
Series: POWERTRENCH
Canonical Name: FDN359AN N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDN359AN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDN359AN Estimated Pricing

Qty Low High
1+ $0.80 $0.80
10+ $0.49 $0.49
100+ $0.32 $0.32
500+ $0.24 $0.24
3,000+ $0.24 $0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDN359AN Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current rating of 2.7A.
  • Low on-resistance of 46 mOhm max at 10V.
  • Low gate charge of 5 nC typical.
  • Pb-Free and Halide Free compliant.

FDN359AN Applications

  • Ideal for low voltage battery-powered circuits.
  • Used in power management and load switching.
  • Suitable for DC-DC converter applications.
  • Designed for fast switching in portable devices.

FDN359AN FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

30 V.

What package is the FDN359AN available in?

SOT-23-3 surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FDN359AN RoHS compliant?

The device is Pb-Free and Halide Free per the datasheet. RoHS compliance is unverified but likely compliant.

What is the typical gate charge?

5 nC typical, 7 nC max at Vgs=5V.

What is the on-resistance at 4.5V gate drive?

60 mOhm typical at Vgs=4.5V, Id=2.7A.

What is the maximum continuous drain current?

2.7 A at Ta=25°C.

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