FDN358P FDN358P is a P-Channel MOSFET from On Semiconductor with 30V drain-source voltage and 1.5A drain current. It comes in a SOT-23-3 surface-mount package with low 125mΩ maximum on-resistance.
Mfr Part #:

FDN358P

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDN358P is a P-Channel MOSFET from On Semiconductor with 30V drain-source voltage and 1.5A drain current. It comes in a SOT-23-3 surface-mount package with low 125mΩ maximum on-resistance.
✓ Total Stock: 30,496 pcs
$ Price Range: $0.24 - $0.82

FDN358P Available from 6 distributors

✓ Authorised
✓ Non-Authorised

FDN358P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDN358P Description

Short technical summary and product information.

The FDN358P is a P-channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for load switching and power management applications. The device supports a drain-source voltage of 30V and a continuous drain current of 1.5A at ambient temperature. Maximum on-resistance is 125mΩ at Vgs=10V and Id=1.5A, with gate drive voltages of 4.5V and 10V.

 

This MOSFET has a gate charge of 5.6nC at Vgs=10V and input capacitance of 182pF at Vds=15V, supporting moderate-speed switching. Maximum gate threshold voltage is 3V at Id=250µA, and the gate-source voltage rating is ±20V. Power dissipation is 500mW at ambient temperature, and the junction temperature range extends from -55°C to 150°C.

 

The device is housed in a compact SOT-23-3 surface-mount package, also known as SuperSOT-3. This package is suitable for space-constrained PCB layouts and standard reflow soldering. Applications include load switches, power path management, and low-voltage DC/DC converters.

FDN358P Quick Information

Product Type: P-Channel MOSFET
Canonical Name: P-Channel MOSFET, 30V, 1.5A, SOT-23-3
Subcategory: Single MOSFETs

FDN358P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDN358P Estimated Pricing

Qty Low High
1+ $0.82 $0.82
10+ $0.51 $0.51
100+ $0.32 $0.32
500+ $0.24 $0.24
3,000+ $0.24 $0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDN358P Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • 1.5A drain current at ambient temperature.
  • Low 125mΩ maximum on-resistance at 10V.
  • SOT-23-3 surface-mount package for compact designs.
  • Gate drive compatible with 4.5V and 10V.

FDN358P Applications

  • Load switching in portable electronics.
  • DC/DC converter power path control.
  • Battery protection and charging circuits.
  • Gate drive for low-voltage power rails.

FDN358P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDN358P?

The FDN358P has a maximum drain-source voltage of 30V.

What is the maximum drain current of the FDN358P?

The FDN358P can handle a continuous drain current of 1.5A at ambient temperature.

What is the on-resistance of the FDN358P?

Maximum on-resistance is 125mΩ at Vgs=10V and Id=1.5A.

What is the operating temperature range of the FDN358P?

The junction temperature range is -55°C to 150°C.

What package is the FDN358P available in?

The FDN358P comes in a SOT-23-3 surface-mount package, also known as SuperSOT-3.

Is the FDN358P RoHS compliant?

The product is listed as RoHS3 compliant in existing data, but this has not been verified from official documentation.

What is the gate threshold voltage of the FDN358P?

The maximum gate threshold voltage is 3V at Id=250µA.

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