| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,020 pcs
|
19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,623 pcs
|
1623 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
1,126 pcs
|
1126 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
270 pcs
|
270 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request | |
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDN357N is an N-Channel logic level enhancement mode power MOSFET from On Semiconductor, manufactured using proprietary high cell density DMOS technology. It is designed to minimize on-state resistance, making it ideal for low voltage applications such as notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits requiring fast switching and low in-line power loss.
Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 1.9A, and pulsed drain current up to 10A. The device features a low on-resistance of 60 mΩ at Vgs=10V and 90 mΩ at Vgs=4.5V. Gate threshold voltage is 2V maximum, and gate charge is 5.9 nC at Vgs=5V. Input capacitance is 235 pF at Vds=10V.
The device is housed in a surface mount SOT-23 package (SUPERSOT-3 design) with a junction-to-ambient thermal resistance of 250°C/W and maximum power dissipation of 500 mW. It operates over a junction temperature range of -55°C to 150°C and is RoHS compliant and Pb-Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.84 | $0.84 |
| 10+ | $0.70 | $0.70 |
| 100+ | $0.44 | $0.44 |
| 3,000+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30 V.
The device is available in SOT-23 surface mount package (TO-236-3, SC-59, SOT-23-3).
The junction temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant and Pb-Free as stated in the datasheet.
The maximum gate threshold voltage is 2 V at Id=250 µA.
The maximum continuous drain current is 1.9 A at Ta=25°C.
The maximum on-resistance is 60 mΩ at Id=2.2 A, Vgs=10 V.