| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
471,000 pcs
|
471000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
286,020 pcs
|
286020 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
2,774 pcs
|
2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,753 pcs
|
2753 pcs | On Request | 1 | On Request | On Request | 1301+ | On Request | On Request | |
|
2,333 pcs
|
2333 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
544 pcs
|
544 pcs | On Request | 1 | On Request | On Request | 1907 | On Request | On Request | |
|
311 pcs
|
311 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
105 pcs
|
105 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
49 pcs
|
49 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDN352AP is a P-Channel logic level MOSFET manufactured by onsemi using advanced PowerTrench technology. This process minimizes on-state resistance while maintaining low gate charge for superior switching performance.
Key electrical specifications include a maximum drain-source voltage of 30V, a continuous drain current of 1.3A at 25°C, and a pulsed drain current capability of 10A. The device offers low on-resistance: 180mΩ maximum at VGS = -10V and ID = -1.3A, and 300mΩ maximum at VGS = -4.5V and ID = -1.1A. Maximum gate threshold voltage is 2.5V at ID = 250µA.
The FDN352AP is housed in a surface mount SOT-23-3 package (also designated TO-236-3 or SC-59). It is designed for low voltage and battery powered applications where low in-line power loss is critical. Power dissipation is rated at 500mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 250°C/W. The device is RoHS compliant, Pb-Free, and Halide Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.76 | $0.76 |
| 10+ | $0.47 | $0.47 |
| 100+ | $0.30 | $0.30 |
| 500+ | $0.23 | $0.23 |
| 3,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (V_DSS) is -30 V.
The continuous drain current is 1.3 A at 25°C ambient temperature.
The FDN352AP is available in a surface mount SOT-23-3 package (also TO-236-3, SC-59).
The operating junction temperature range is -55°C to 150°C.
Yes, the FDN352AP is RoHS3 compliant, Pb-Free, and Halide Free as stated in the datasheet.
The maximum on-resistance is 180 mΩ at VGS = -10 V and ID = -1.3 A.
The maximum gate threshold voltage is 2.5 V at ID = 250 µA.