| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,494 pcs
|
16494 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,774 pcs
|
2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,969 pcs
|
1969 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
460 pcs
|
460 pcs | On Request | 1 | On Request | On Request | 520 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDN342P is a P-Channel MOSFET from On Semiconductor, designed using advanced POWERTRENCH technology. It features a drain-source voltage rating of -20 V and a continuous drain current of -2 A at 25°C, with pulsed current capability up to -10 A. The device offers low on-resistance: typically 62 mΩ at VGS = -4.5 V and 99 mΩ at VGS = -2.5 V, making it suitable for low-voltage power management applications.
This MOSFET is specified for gate drive voltages from 2.5 V to 12 V, with a rugged gate rating of ±12 V. Key electrical characteristics include a typical input capacitance of 635 pF and a maximum gate charge of 9 nC at VGS = 4.5 V. The device operates over a junction temperature range of -55°C to 150°C.
The FDN342P is housed in a surface-mount SOT-23-3 (SUPERSOT-3) package, which is Pb-free and RoHS3 compliant. It is ideal for load switching, battery protection, and general power management in space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.96 | $0.96 |
| 10+ | $0.60 | $0.60 |
| 100+ | $0.39 | $0.39 |
| 500+ | $0.30 | $0.30 |
| 1,000+ | $0.27 | $0.27 |
| 3,000+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is -20 V.
The continuous drain current is -2 A at TA = 25°C.
The device is available in a surface mount SOT-23-3 (SUPERSOT-3) package.
The operating junction temperature range is -55°C to 150°C.
The device is marked as RoHS3 compliant and Pb-free, but this is based on low-confidence data and should be verified with the manufacturer.
The typical on-resistance is 62 mΩ, with a maximum of 80 mΩ at ID = -2 A and VGS = -4.5 V.
The gate threshold voltage ranges from -0.6 V minimum to -1.5 V maximum, with a typical value of -1.05 V at VDS = VGS and ID = -250 µA.