| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
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30 pcs
$0.32
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30 pcs |
$0.32
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1 | On Request | On Request | On Request | On Request | On Request |
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The FDN338P is a P Channel MOSFET from manufacturer HXY, designed for various electronic applications. This component features a maximum drain-source voltage of 20V and is housed in a compact SOT-23 package, suitable for surface-mount designs.
Key electrical characteristics include its P Channel type, enabling specific circuit functionalities. The SOT-23 package is widely used in surface-mount technology, offering space efficiency on printed circuit boards. This MOSFET is a component within the broader category of discrete semiconductor products, specifically single transistors.
As a MOSFET, the FDN338P facilitates switching and amplification functions in electronic circuits. Its specifications, such as the 20V drain-source voltage, make it suitable for applications requiring moderate voltage handling. The SOT-23 package ensures compatibility with automated assembly processes common in modern electronics manufacturing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDN338P has a drain-source voltage rating of 20 V.
The FDN338P is available in a SOT-23 package.
The FDN338P supports a continuous drain current of 3.8 A.
The typical on-resistance is 115 mΩ at a gate-source voltage of 4.5V.
The gate-source voltage is 1 V.
The FDN338P is a P-Channel MOSFET.