| Category | |
| Manufacturer Name | |
| Conflict Minerals | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDN338P is a P-Channel MOSFET from On Semiconductor, utilizing advanced POWERTRENCH technology for low-voltage battery power management. It features a maximum drain-source voltage of -20V and a continuous drain current of 1.6A at 25°C, with a pulsed current capability of 5A. The on-resistance is 115mΩ maximum at VGS=-4.5V and 155mΩ at VGS=-2.5V, enabling efficient switching. The gate threshold voltage ranges from -0.4V to 1.5V, and the device offers low gate charge (6.2nC) and input capacitance (451pF) for fast switching performance.
Packaged in a SUPERSOT-3 surface mount package (compatible with SOT-23-3), the FDN338P provides a compact footprint with 30% higher power handling than standard SOT-23. Maximum power dissipation is 500mW at 25°C ambient, with a junction-to-ambient thermal resistance of 250°C/W. The device operates over a junction temperature range of -55°C to +150°C.
The FDN338P is Pb-Free and Halide Free, making it suitable for environmentally conscious designs. Typical applications include battery management, load switching, and battery protection circuits in portable electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
| 10+ | $0.86 | $0.86 |
| 100+ | $0.54 | $0.54 |
| 500+ | $0.34 | $0.34 |
| 1,000+ | $0.25 | $0.25 |
| 3,000+ | $0.25 | $0.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is -20V.
The continuous drain current is 1.6A at TA=25°C.
The maximum on-resistance is 115mΩ at VGS=-4.5V and ID=-1.6A, and 155mΩ at VGS=-2.5V and ID=-1.3A.
It is available in a SUPERSOT-3 surface mount package (TO-236-3, SC-59, SOT-23-3).
The operating junction temperature range is -55°C to +150°C.
The device is Pb-Free and Halide Free, and is listed as RoHS3 Compliant (unverified).
The gate threshold voltage (Vgs(th)) ranges from -0.4V minimum to 1.5V maximum, with a typical value of -0.8V at ID=-250µA.