| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
406,020 pcs
|
406020 pcs | On Request | 1 | On Request | On Request | 21 | On Request | On Request | |
|
295,569 pcs
|
295569 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,090 pcs
|
2090 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,090 pcs
|
2090 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,458 pcs
|
1458 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request | |
|
565 pcs
|
565 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request | |
|
238 pcs
|
238 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDN337N is an N-Channel logic level enhancement mode power MOSFET produced using onsemi's proprietary, high cell density DMOS technology. This process is tailored to minimize on-state resistance, making it suitable for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching and low in-line power loss are needed.
Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 2.2A, and pulsed drain current of 10A. The on-resistance is 65mOhm maximum at 4.5V gate drive (2.2A) and 82mOhm typical at 2.5V. The gate threshold voltage is 1V maximum at 250µA. Gate charge is 9nC at 4.5V, and input capacitance is 300pF at 10V. Maximum power dissipation is 500mW at 25°C ambient, with an operating junction temperature range of -55°C to 150°C.
The device is housed in a SOT-23-3 surface mount package (SUPERSOT-3) and is supplied in tape and reel packaging (3000 pieces per reel). It is Pb-Free and Halogen Free as verified by the datasheet, and stated as RoHS and REACH compliant (unverified).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.90 | $0.90 |
| 10+ | $0.56 | $0.56 |
| 100+ | $0.36 | $0.36 |
| 500+ | $0.28 | $0.28 |
| 3,000+ | $0.28 | $0.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The FDN337N is available in a SOT-23-3 surface mount package.
The operating junction temperature range is -55°C to 150°C.
The FDN337N is stated as RoHS3 compliant, but this is unverified (low confidence).
The continuous drain current (Id) is 2.2A at 25°C.
The maximum gate threshold voltage (Vgs(th)) is 1V at 250µA drain current.
The maximum on-resistance is 65mOhm at 2.2A and 4.5V gate drive.