| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,320 pcs
|
17320 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
2,698 pcs
|
2698 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,698 pcs
|
2698 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,102 pcs
|
2102 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request | |
|
1,580 pcs
|
1580 pcs | On Request | 1 | On Request | On Request | 528 | On Request | On Request | |
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
FDN336P is a P-Channel MOSFET manufactured by On Semiconductor using the advanced POWERTRENCH process, designed to minimize on-state resistance while maintaining low gate charge for efficient switching. This 2.5V specified device is suitable for portable electronics applications including load switching, power management, battery charging circuits, and DC-DC conversion.
Key electrical characteristics include a maximum drain-to-source voltage of 20V, continuous drain current of 1.3A, and pulsed drain current rating of 10A. The maximum static drain-source on-resistance is 200mΩ at VGS=-4.5V and ID=-1.3A, with a typical gate charge of 3.6nC. Gate-source voltage is rated at ±8V, and the maximum gate threshold voltage is 1.5V at ID=-250µA. The device operates over a junction temperature range of -55°C to +150°C.
The MOSFET is housed in a surface-mount SOT-23-3 (SUPERSOT-3) package, which provides low on-resistance and 30% higher power handling capability than SOT-23 in the same footprint. The package supports 3000-unit tape and reel shipping and is Pb-free.
With its low gate charge, 2.5V specified operation, and compact footprint, the FDN336P is well suited for space-constrained battery-powered designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.74 | $0.74 |
| 10+ | $0.46 | $0.46 |
| 100+ | $0.30 | $0.30 |
| 500+ | $0.23 | $0.23 |
| 3,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDSS) is 20V.
The FDN336P comes in a surface-mount SOT-23-3 package (TO-236-3/SC-59).
The FDN336P operates over a junction temperature range of -55°C to +150°C.
The existing product data lists the FDN336P as RoHS3 compliant, but this has not been independently verified.
The maximum continuous drain current is 1.3A (Ta), with a pulsed drain current of 10A.
The maximum static drain-source on-resistance is 200mΩ at VGS=-4.5V and ID=-1.3A; the datasheet also specifies 270mΩ at VGS=-2.5V.
The maximum gate threshold voltage is 1.5V at ID=-250µA.