FDN335N N-Channel MOSFET, 20V drain-source voltage, 1.7A continuous drain current, low Rds(on) of 70mΩ at 4.5V gate drive. Packaged in surface-mount SOT-23-3.
Mfr Part #:

FDN335N

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 20V drain-source voltage, 1.7A continuous drain current, low Rds(on) of 70mΩ at 4.5V gate drive. Packaged in surface-mount SOT-23-3.
✓ Total Stock: 588,210 pcs
$ Price Range: $0.23 - $0.76

FDN335N Available from 8 distributors

✓ Authorised
✓ Non-Authorised

FDN335N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDN335N Description

Short technical summary and product information.

FDN335N is an N-Channel MOSFET from ON Semiconductor designed for low-voltage switching applications. It features a drain-source voltage rating of 20V and a continuous drain current of 1.7A at ambient temperature. The device offers a maximum on-resistance of 70mΩ at a gate-source voltage of 4.5V, ensuring efficient power handling.

 

With a maximum gate threshold voltage of 1.5V and a total gate charge of 5nC, the FDN335N is suitable for low-voltage gate drive circuits. Its low input capacitance of 310pF at 10V drain-source voltage allows for fast switching. The device can dissipate up to 500mW of power at ambient temperature and operates over a junction temperature range of -55°C to 150°C.

 

The FDN335N is available in a surface-mount TO-236-3 (SC-59/SOT-23-3) package, specifically the SOT-23-3 supplier device package. This compact package is ideal for space-constrained PCB designs and is compatible with standard reflow soldering processes.

FDN335N Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET, 20V, 1.7A, SOT-23-3
Subcategory: Single MOSFET

FDN335N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDN335N Estimated Pricing

Qty Low High
1+ $0.76 $0.76
10+ $0.47 $0.47
100+ $0.30 $0.30
500+ $0.23 $0.23
3,000+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDN335N Features

  • N-Channel MOSFET with 20V drain-source rating.
  • 1.7A continuous drain current capability.
  • Low on-resistance of 70mΩ at 4.5V.
  • SOT-23-3 surface-mount package.

FDN335N Applications

  • Suitable for load switching applications.
  • Used in DC-DC converter circuits.
  • Ideal for battery-powered portable devices.

FDN335N FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDN335N?

The drain-source voltage rating is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 1.7A at ambient temperature.

What is the on-resistance of the FDN335N?

The maximum on-resistance is 70mΩ at a gate-source voltage of 4.5V and drain current of 1.7A.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (junction temperature).

What package is the FDN335N available in?

It is available in TO-236-3, SC-59, and SOT-23-3 packages, with supplier device package SOT-23-3.

Is the FDN335N RoHS compliant?

According to existing data, the FDN335N is RoHS3 compliant, but this status is unverified.

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