| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
2,633 pcs
|
2633 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request | |||||||||
|
2,040 pcs
$0.28
|
2040 pcs |
$0.28
|
1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
1,842 pcs
|
1842 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
624 pcs
|
624 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
82 pcs
|
82 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |||||||||
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
FDN327N is an N-Channel enhancement-mode MOSFET manufactured by onsemi using the POWERTRENCH process. It is designed for power management applications such as load switching, battery protection, and general power conversion. The device is rated for a drain-source voltage of 20V and a continuous drain current of 2A at ambient temperature, with a pulsed current rating of 8A.
The MOSFET provides a maximum on-resistance of 70mΩ at VGS=4.5V and 2A drain current, with typical values of 40mΩ. It supports gate drive voltages from 1.8V, making it suitable for low-voltage logic level switching. The gate threshold voltage ranges from 0.4V to 1.5V, and the total gate charge is typically 4.5nC, enabling fast switching. Input capacitance is 423pF maximum at VDS=10V.
Housed in a compact SOT-23-3 surface-mount package, the FDN327N offers a power dissipation of 500mW at 25°C ambient, with a junction-to-ambient thermal resistance of 250°C/W and junction-to-case thermal resistance of 75°C/W. The operating junction temperature range is -55°C to 150°C. The device is Pb-free and halogen-free, and is supplied on tape and reel in quantities of 3000.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.64 | $0.64 |
| 10+ | $0.40 | $0.40 |
| 100+ | $0.25 | $0.25 |
| 500+ | $0.19 | $0.19 |
| 3,000+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 20V.
The FDN327N is available in a SOT-23-3 surface-mount package.
The operating junction temperature range is -55°C to +150°C.
The FDN327N is reported as RoHS3 compliant, though this status is not yet verified.
The continuous drain current is 2A at ambient temperature.
The maximum on-resistance is 70mΩ at VGS=4.5V and ID=2A, with a typical value of 40mΩ.
The typical gate charge is 4.5nC at VGS=4.5V, with a maximum of 6.3nC.