FDN308P P-Channel MOSFET with -20V drain-source voltage and -1.5A continuous drain current. Features low on-resistance of 125mΩ at 4.5V gate drive and is housed in a SOT-23-3 surface mount package.
Mfr Part #:

FDN308P

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET with -20V drain-source voltage and -1.5A continuous drain current. Features low on-resistance of 125mΩ at 4.5V gate drive and is housed in a SOT-23-3 surface mount package.
✓ Total Stock: 4,323 pcs
$ Price Range: $0.34 - $0.85

FDN308P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,323 pcs
4323 pcs On Request 1 On Request On Request 2012 On Request On Request

FDN308P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDN308P Description

Short technical summary and product information.

The FDN308P is a P-Channel MOSFET from On Semiconductor, utilizing advanced POWERTRENCH trench technology for low on-resistance and fast switching. It is rated for a maximum drain-source voltage of -20 V and continuous drain current of -1.5 A. The device offers a low on-resistance of 125 mΩ at VGS = -4.5 V and 190 mΩ at VGS = -2.5 V, making it suitable for low-voltage power management applications. The gate threshold voltage ranges from -0.6 V to -1.5 V with a typical value of -1.0 V. The MOSFET is designed for a wide gate drive voltage range of 2.5 V to 12 V. It is housed in a SOT-23-3 (SUPERSOT) surface mount package, which provides improved power handling capability compared to standard SOT-23. The device is Pb-Free and Halide Free. Typical applications include power management, load switching, and battery protection. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 500 mW at 25°C ambient.

FDN308P Quick Information

Product Type: P-Channel MOSFET
Series: POWERTRENCH
Canonical Name: P-Channel MOSFET, -20 V, -1.5 A, SOT-23-3
Subcategory: P-Channel MOSFET

FDN308P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDN308P Estimated Pricing

Qty Low High
1+ $0.85 $0.85
10+ $0.53 $0.53
100+ $0.34 $0.34
3,000+ $0.34 $0.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDN308P Features

  • P-Channel MOSFET with -20V drain-source voltage.
  • Low on-resistance of 125mΩ at 4.5V gate drive.
  • High performance POWERTRENCH trench technology.
  • Pb-Free and Halide Free device.
  • Surface mount SOT-23-3 package.

FDN308P Applications

  • Power management applications.
  • Load switch circuits.
  • Battery protection systems.
  • General purpose switching.

FDN308P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDN308P?

The maximum drain-source voltage is -20 V.

What is the continuous drain current rating?

The maximum continuous drain current is -1.5 A.

What is the on-resistance of the FDN308P?

The on-resistance is 125 mΩ maximum at VGS = -4.5 V and ID = -1.5 A, and 190 mΩ maximum at VGS = -2.5 V and ID = -1.3 A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the FDN308P available in?

The device is available in a SOT-23-3 surface mount package (also known as TO-236-3 or SC-59).

Is the FDN308P RoHS compliant?

The device is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

What is the gate threshold voltage?

The gate threshold voltage is typically -1.0 V, with a minimum of -0.6 V and maximum of -1.5 V at ID = -250 µA.

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