| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39,000 pcs
|
39000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
28,020 pcs
|
28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,120 pcs
|
4120 pcs | On Request | 1 | On Request | On Request | 1619+ | On Request | On Request | |
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,902 pcs
|
2902 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,520 pcs
|
2520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
750 pcs
|
750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
133 pcs
|
133 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDN306P is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for low-voltage power management and load switching applications.
Key electrical specifications include a drain-to-source voltage (Vdss) of 12V and a continuous drain current of 2.6A at ambient temperature. The device features a maximum drain-source on-resistance of 40 mΩ at Vgs = 4.5V and Id = 2.6A, enabling efficient power handling in compact designs. The gate threshold voltage is 1.5V maximum at Id = 250 µA, and the maximum gate-source voltage is ±8V.
The MOSFET is offered in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59), suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 500mW at ambient temperature. Gate charge is 17 nC at Vgs = 4.5V, and input capacitance is 1138 pF at Vds = 6V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
| 10+ | $0.47 | $0.47 |
| 100+ | $0.30 | $0.30 |
| 500+ | $0.23 | $0.23 |
| 3,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 12V.
The maximum continuous drain current is 2.6A at ambient temperature (Ta).
The FDN306P is available in surface-mount SOT-23-3 package (also known as TO-236-3 and SC-59).
The operating junction temperature range is -55°C to 150°C.
The FDN306P is marked as RoHS3 compliant, though this is unverified.
The maximum drain-source on-resistance is 40 mΩ at Vgs = 4.5V and Id = 2.6A.
The FDN306P is used for low-voltage load switching, power management, and DC/DC converter disconnect.