| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,680 pcs
|
23680 pcs | On Request | 1 | On Request | On Request | 1817+ | On Request | On Request | |
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,645 pcs
|
2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
634 pcs
|
634 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
288 pcs
|
288 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDN302P is a P-Channel enhancement-mode MOSFET from On Semiconductor, designed for low-voltage power management and load switching applications. It features a 20V drain-to-source voltage rating and a continuous drain current of 2.4A at 25°C ambient temperature.
The device offers a low on-resistance of 55mOhm maximum at Vgs=4.5V and Id=2.4A, with a gate threshold voltage of 1.5V at 250µA. It supports drive voltages of 2.5V and 4.5V, and has a maximum gate-to-source voltage of ±12V. The MOSFET is specified for operation over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 500mW at 25°C.
Key dynamic characteristics include a maximum gate charge of 14nC at Vgs=4.5V and an input capacitance of 882pF at Vds=10V. The device is packaged in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59), making it suitable for compact PCB layouts.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.69 | $0.69 |
| 10+ | $0.42 | $0.42 |
| 100+ | $0.27 | $0.27 |
| 500+ | $0.24 | $0.24 |
| 3,000+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20V.
The FDN302P is available in TO-236-3, SC-59, and SOT-23-3 packages, with the supplier device package being SOT-23-3.
The junction temperature range is -55°C to 150°C.
The FDN302P is listed as RoHS3 compliant, but this status is unverified.
The maximum continuous drain current is 2.4A at 25°C ambient temperature.
The maximum on-resistance is 55mOhm at Vgs=4.5V and Id=2.4A.