| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 2035+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMT800100DC is an N-Channel power MOSFET manufactured by onsemi using the advanced POWERTRENCH process. It combines silicon and Dual Cool package technology to achieve a maximum drain-to-source on-resistance of 2.95 mOhm at VGS = 10V and ID = 24A, and 4.46 mOhm at VGS = 6V and ID = 19A. The device is rated for 100V drain-to-source voltage and supports continuous drain current of 162A at TC = 25°C, 102A at TC = 100°C, and 24A at TA = 25°C, with pulsed drain current up to 989A.
This MOSFET features a maximum gate charge of 111nC at VGS = 10V and input capacitance of 7835pF at VDS = 50V, enabling efficient switching performance. The device includes next-generation enhanced body diode technology engineered for soft recovery, and is 100% UIL tested. Maximum power dissipation is 156W at TC = 25°C and 3.2W at TA = 25°C, with operating junction temperature range from -55°C to 150°C.
The FDMT800100DC is housed in a low-profile 8x8mm 8-PowerVDFN surface mount package with the supplier device package designation 8-Dual Cool™88. It offers extremely low junction-to-ambient thermal resistance of 38°C/W (Note 1a) and junction-to-case thermal resistance of 1.6°C/W (top source) and 0.8°C/W (bottom drain). The device is Pb-Free, Halide Free, and RoHS compliant, with MSL1 robust package design.
Typical applications include ORing FET / load switching, synchronous rectification, and DC-DC conversion circuits where low on-resistance and high efficiency are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.77 | $10.77 |
| 10+ | $7.42 | $7.42 |
| 100+ | $5.68 | $5.68 |
| 1,000+ | $5.31 | $5.31 |
| 3,000+ | $5.31 | $5.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDS) is 100V.
The maximum continuous drain current is 162A at TC = 25°C.
The maximum drain-to-source on-resistance is 2.95mOhm at VGS = 10V and ID = 24A.
The operating junction temperature range is -55°C to 150°C.
The device is available in an 8-PowerVDFN surface mount package with supplier device package 8-Dual Cool™88.
Yes, the device is RoHS compliant, Pb-Free, and Halide Free as stated in the datasheet.
The maximum power dissipation is 156W at TC = 25°C.