FDMT1D3N08B N-Channel PowerTrench MOSFET from On Semiconductor, 80V drain-source voltage, 164A continuous drain current, 1.35 mOhm on-resistance.
Mfr Part #:

FDMT1D3N08B

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel PowerTrench MOSFET from On Semiconductor, 80V drain-source voltage, 164A continuous drain current, 1.35 mOhm on-resistance.
✓ Total Stock: 3,000 pcs
$ Price Range: $3.29 - $7.52

FDMT1D3N08B Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

FDMT1D3N08B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMT1D3N08B Description

Short technical summary and product information.

The FDMT1D3N08B is an N-Channel MOSFET from On Semiconductor, manufactured using the advanced PowerTrench process. It is designed for high-efficiency power conversion and load switching applications. Key electrical ratings include a drain-to-source voltage of 80V, continuous drain current of 164A at case temperature 25°C, and a maximum on-resistance of 1.35 mOhm at 10V gate drive. The device is housed in the 8-Dual Cool88 package (8-PowerVDFN), which is a surface-mount package optimized for low thermal resistance. The junction-to-case thermal resistance is 0.7°C/W at the bottom drain, enabling effective heat dissipation. The MOSFET supports gate drive voltages of 8V and 10V and has a maximum gate threshold voltage of 4V.

FDMT1D3N08B Quick Information

Product Type: MOSFET
Series: Dual Cool
Canonical Name: FDMT1D3N08B N-Channel MOSFET 80V 164A 8-Dual Cool88
Subcategory: Single N-Channel

FDMT1D3N08B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMT1D3N08B Estimated Pricing

Qty Low High
1+ $7.52 $7.52
10+ $5.11 $5.11
50+ $4.07 $4.07
100+ $3.74 $3.74
500+ $3.29 $3.29

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMT1D3N08B Features

  • 80V drain-source breakdown voltage.
  • 164A continuous drain current at 25°C.
  • 1.35 mOhm on-resistance at 10V gate drive.
  • Surface mount 8-PowerVDFN package.
  • Avalanche energy rated at 1734 mJ.

FDMT1D3N08B Applications

  • OringFET and load switching circuits.
  • Synchronous rectification in power supplies.
  • DC-DC conversion and power management.

FDMT1D3N08B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FDMT1D3N08B?

The maximum drain-to-source voltage (Vdss) is 80V.

What is the continuous drain current at 25°C?

The continuous drain current is 164A at 25°C case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 1.35 mOhm at 36A and 10V gate drive.

What is the package type?

The package type is 8-PowerVDFN (supplier device package 8-Dual Cool88). Mounting type is surface mount.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDMT1D3N08B RoHS compliant?

Yes, the datasheet states it is RoHS compliant.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 4V at 250 microamps drain current.

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