| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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72,000 pcs
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72000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS9410-F085 is an N-Channel MOSFET manufactured by onsemi. It is designed for high-current switching applications, offering a drain-to-source voltage rating of 40V and a continuous drain current of 50A at case temperature. The device features a maximum on-resistance of 4.4mOhm at 50A and 10V gate drive, with a typical value of 3.7mOhm.
This MOSFET has a maximum gate threshold voltage of 4V at 250µA drain current, and a maximum total gate charge of 36nC at 10V. The input capacitance is 1790pF at 20V drain-source voltage. These characteristics make it suitable for high-efficiency power conversion and switching circuits.
The device is housed in an 8-PowerVDFN package with a Power56 supplier device package, designed for surface-mount assembly. It can dissipate up to 75W and operates over a junction temperature range of -55°C to 175°C.
The maximum drain-to-source voltage is 40V.
The continuous drain current is 50A at case temperature.
The maximum on-resistance is 4.4mOhm at 50A and 10V gate drive.
The operating junction temperature range is -55°C to 175°C.
The package is 8-PowerVDFN, with a supplier device package of Power56.
The RoHS status is listed as RoHS3 compliant, but this is unverified.