FDMS8D8N15C N-Channel MOSFET rated for 150V drain-source voltage and 85A continuous drain current. Features low on-resistance of 8.8mΩ typical at 10V gate drive.
Mfr Part #:

FDMS8D8N15C

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 150V drain-source voltage and 85A continuous drain current. Features low on-resistance of 8.8mΩ typical at 10V gate drive.
✓ Total Stock: 9,473 pcs
$ Price Range: $2.74 - $4.07

FDMS8D8N15C Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,333 pcs
8333 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
140 pcs
140 pcs On Request 1 On Request On Request On Request On Request On Request

FDMS8D8N15C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS8D8N15C Description

Short technical summary and product information.

This N-Channel MV MOSFET is produced using onsemi's advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

 

Key specifications include a drain-source voltage rating of 150V, continuous drain current of 85A at case temperature 25°C, and maximum on-resistance of 8.8mΩ at VGS=10V, ID=45A (9.4mΩ at VGS=8V, ID=22.5A). Gate threshold voltage ranges from 2.5V minimum to 4.5V maximum. Input capacitance is 3600pF and gate charge is 50nC, enabling efficient switching. The device is 100% UIL tested and offers a single pulse avalanche energy rating of 102mJ.

 

The FDMS8D8N15C is housed in an 8-PowerTDFN (8-PQFN 5x6) surface mount package with MSL1 moisture sensitivity level. It is RoHS3 compliant and Pb-Free. Typical applications include primary DC-DC converters, synchronous rectifiers, motor drives, and solar power systems.

FDMS8D8N15C Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET, 150V Drain-Source, 85A Continuous, 8.8mΩ On-Resistance, 8-PowerTDFN
Subcategory: N-Channel MOSFET

FDMS8D8N15C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMS8D8N15C Estimated Pricing

Qty Low High
1+ $4.07 $4.07
10+ $2.74 $2.74
3,000+ $2.74 $2.74

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS8D8N15C Features

  • Shielded Gate MOSFET technology for low RDS(on).
  • Max on-resistance 8.8mΩ at 10V gate drive.
  • Continuous drain current up to 85A.
  • Low gate charge for fast switching.
  • RoHS3 compliant and Pb-Free.

FDMS8D8N15C Applications

  • Primary DC-DC converter MOSFET.
  • Synchronous rectifier in DC-DC and AC-DC.
  • Motor drive applications.
  • Solar power systems.

FDMS8D8N15C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

150V minimum.

What package does the FDMS8D8N15C come in?

8-PowerTDFN (8-PQFN 5x6) surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FDMS8D8N15C RoHS compliant?

Yes, RoHS3 compliant and Pb-Free.

What is the typical on-resistance?

7.0mΩ typical, 8.8mΩ maximum at VGS=10V, ID=45A.

What is the gate threshold voltage?

2.5V minimum, 3.5V typical, 4.5V maximum.

What is the single pulse avalanche energy rating?

102mJ maximum.

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