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FDMS8880 N-Channel MOSFET rated for 30V drain-source voltage and 13.5A (Ta) / 21A (Tc) drain current. Features low on-resistance of 8.5mOhm at 10V gate drive.
Mfr Part #:

FDMS8880

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 30V drain-source voltage and 13.5A (Ta) / 21A (Tc) drain current. Features low on-resistance of 8.5mOhm at 10V gate drive.
✓ Total Stock: 17,850 pcs
$ Price Range: $0.43 - $2.09

FDMS8880 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
17,850 pcs
On Request
17850 pcs On Request 1 On Request On Request On Request On Request On Request
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FDMS8880 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDMS8880 Description

Short technical summary and product information.

This is an N-Channel MOSFET from ON Semiconductor, part number FDMS8880. It is designed for surface mount applications and utilizes MOSFET (Metal Oxide) technology.

 

Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 13.5A at 25°C ambient and 21A at 25°C case temperature. The maximum on-resistance is 8.5mOhm at 13.5A and 10V gate drive. Gate threshold voltage is 2.5V max at 250µA. The device can dissipate up to 2.5W (ambient) or 42W (case).

 

The MOSFET is housed in an 8-PowerTDFN package (supplier package 8-PQFN 5x6mm) and supports surface mount mounting. It operates over a junction temperature range of -55°C to 150°C. Input capacitance is 1585pF at 15V drain-source, and total gate charge is 33nC at 10V.

 

This component is suitable for various power management and switching applications where low on-resistance and high efficiency are required. The compact PowerTDFN package enables high power density designs.

FDMS8880 Quick Information

Product Type: N-Channel MOSFET
Series: PowerTrench
Canonical Name: N-Channel MOSFET, 30V Drain-Source Voltage, 13.5A/21A Drain Current, 8-PowerTDFN Package
Subcategory: Single N-Channel MOSFET

FDMS8880 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected

FDMS8880 Estimated Pricing

Qty Low High
1+ $2.09 $2.09
10+ $1.29 $1.29
100+ $0.85 $0.85
500+ $0.67 $0.67
1,000+ $0.58 $0.58
3,000+ $0.49 $0.49
6,000+ $0.45 $0.45
9,000+ $0.44 $0.44
24,000+ $0.43 $0.43

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS8880 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Low on-resistance of 8.5mOhm at 10V gate drive.
  • High current rating up to 21A at case temperature.
  • Surface mount 8-PowerTDFN package.
  • Wide operating temperature range -55°C to 150°C.

FDMS8880 Applications

  • Used in DC-DC converter power stages.
  • Suitable for load switching applications.
  • Ideal for battery management systems.
  • Applicable in motor drive circuits.

FDMS8880 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V maximum.

What package does the FDMS8880 come in?

8-PowerTDFN (supplier package 8-PQFN 5x6mm).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FDMS8880 RoHS compliant?

RoHS3 Compliant (unverified).

What is the maximum drain current?

13.5A at 25°C ambient, 21A at 25°C case.

What is the on-resistance?

8.5mOhm maximum at 13.5A and 10V gate drive.

What is the gate threshold voltage?

2.5V maximum at 250µA drain current.

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