| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,570 pcs
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2570 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDMS8672S is an N-Channel PowerTrench SyncFET MOSFET from On Semiconductor (formerly Fairchild). It is designed for low-loss power conversion applications, combining advanced silicon and package technology.
Key electrical specifications include a drain-source voltage rating of 30V, continuous drain current of 35A (case-limited) or 90A (silicon-limited), and pulsed current up to 200A. On-resistance is typically 4mΩ at 10V gate drive and 5.2mΩ at 4.5V. Gate threshold voltage ranges from 1V to 3V.
The device features a monolithic Schottky body diode for improved efficiency. It is suitable for synchronous rectification in DC/DC converters, notebook Vcore/GPU low-side switches, networking point-of-load converters, and telecom secondary-side rectification.
The MOSFET is housed in a surface-mount 8-PowerTDFN (Power56) package, also known as 8-PQFN (5x6mm). It is RoHS compliant and has an MSL1 moisture sensitivity level. Operating temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 260+ | $1.16 | $1.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
8-PowerTDFN (Power56) also known as 8-PQFN (5x6mm).
-55°C to 150°C junction temperature.
Yes, the datasheet states RoHS compliant.
N-Channel MOSFET with PowerTrench technology.
30V.
35A at case temperature 25°C (package limited), 90A silicon limited, and 17A at ambient 25°C.
Maximum 5mΩ at Vgs=10V, Id=17A; typical 4mΩ.