| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The FDMS8670AS is an N-Channel PowerTrench SyncFET MOSFET from On Semiconductor, designed for high-efficiency power conversion applications. It features a maximum drain-to-source voltage of 30V and a continuous drain current rating of 42A at case temperature 25°C (23A at ambient 25°C). The device achieves a maximum on-resistance of 3.0 mOhm at Vgs=10V and 4.7 mOhm at Vgs=4.5V, enabling low conduction losses.
This MOSFET integrates a monolithic Schottky body diode (SyncFET technology) for improved rectification efficiency. It offers a maximum gate charge of 55 nC at Vgs=10V and input capacitance of 3615 pF, supporting fast switching in DC/DC converters. The device is housed in a surface-mount 8-PowerTDFN package (8-PQFN 5x6mm) and operates over a junction temperature range of -55°C to +150°C.
Typical applications include synchronous rectification in DC/DC converters, notebook Vcore and GPU low-side switches, networking point-of-load low-side switches, and telecom secondary-side rectification.
| Qty | Low | High |
|---|---|---|
| 235+ | $1.27 | $1.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30 V.
The continuous drain current is 42 A at case temperature 25°C (package limited) and 23 A at ambient temperature 25°C (silicon limited).
The maximum on-resistance is 3.0 mOhm at Vgs=10V, Id=23A, and 4.7 mOhm at Vgs=4.5V, Id=18A.
The operating junction temperature range is -55°C to +150°C.
The FDMS8670AS is available in a surface-mount 8-PowerTDFN package, also known as 8-PQFN (5x6mm).
The FDMS8670AS is listed as RoHS3 Compliant, though this compliance data is unverified.
The maximum gate charge (Qg) is 55 nC at Vgs=10V.