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FDMS8670 N-Channel Power Trench MOSFET, 30V drain-source voltage, 42A continuous drain current (package limited), 2.6mΩ typical on-resistance at 10V. Surface mount in 8-PowerTDFN (Power 56) package.
Mfr Part #:

FDMS8670

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power Trench MOSFET, 30V drain-source voltage, 42A continuous drain current (package limited), 2.6mΩ typical on-resistance at 10V. Surface mount in 8-PowerTDFN (Power 56) package.
✓ Total Stock: 1,974 pcs
$ Price Range: $1.27

FDMS8670 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,974 pcs
On Request
1974 pcs On Request 1 On Request On Request 1007+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDMS8670 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDMS8670 Description

Short technical summary and product information.

The FDMS8670 is an N-Channel Power Trench MOSFET manufactured by On Semiconductor (originally Fairchild). It features a maximum drain-source voltage of 30V and a continuous drain current of 42A at case temperature 25°C (package limited). The device offers low on-resistance: typical 2.1mΩ at VGS=10V, ID=24A, with a maximum of 2.6mΩ. It is designed for DC-DC conversion applications, particularly synchronous rectification, due to its low gate charge (45nC typical) and fast switching characteristics. The MOSFET is housed in an 8-PowerTDFN (Power 56) surface mount package with a 5x6mm footprint, and is RoHS compliant. It operates over a junction temperature range of -55°C to 150°C.

FDMS8670 Quick Information

Product Type: N-Channel MOSFET
Series: Power Trench
Canonical Name: FDMS8670 N-Channel Power Trench MOSFET
Subcategory: N-Channel MOSFET

FDMS8670 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMS8670 Estimated Pricing

Qty Low High
235+ $1.27 $1.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS8670 Features

  • 30V drain-source voltage rating.
  • 42A continuous drain current at Tc=25°C.
  • Low on-resistance: 2.1mΩ typical at 10V.
  • Fast switching with 45nC typical gate charge.
  • RoHS3 compliant and 100% UIL tested.

FDMS8670 Applications

  • DC-DC conversion and synchronous rectification.
  • Low-voltage power management circuits.
  • Battery-powered device load switching.
  • Point-of-load voltage regulation modules.

FDMS8670 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDMS8670?

30V.

What package is the FDMS8670 available in?

8-PowerTDFN (Power 56) surface mount package, also known as 8-PQFN (5x6).

What is the operating temperature range of the FDMS8670?

-55°C to 150°C junction temperature.

Is the FDMS8670 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the typical on-resistance of the FDMS8670?

2.1mΩ typical at VGS=10V, ID=24A, with a maximum of 2.6mΩ.

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