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FDMS8662 N-Channel PowerTrench MOSFET, 30V drain-source voltage, 49A continuous drain current (package limited), 2.0mΩ max on-resistance at 10V. Surface mount in 8-PowerTDFN / 8-PQFN (5x6) package.
Mfr Part #:

FDMS8662

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel PowerTrench MOSFET, 30V drain-source voltage, 49A continuous drain current (package limited), 2.0mΩ max on-resistance at 10V. Surface mount in 8-PowerTDFN / 8-PQFN (5x6) package.
✓ Total Stock: 200 pcs

FDMS8662 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Hybrid Electronics ✓
Non-Authorised Inventory information
200 pcs
On Request
200 pcs On Request 1 On Request On Request NO DC On Request On Request
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FDMS8662 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDMS8662 Description

Short technical summary and product information.

The FDMS8662 is an N-Channel PowerTrench MOSFET from On Semiconductor designed for low-loss power conversion applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 49A (package limited at TC=25°C) with a pulsed current rating of 200A. The device achieves a low typical on-resistance of 1.6mΩ at VGS=10V, ID=28A, with a maximum of 2.0mΩ. Gate threshold voltage ranges from 1.0V to 3.0V, and the gate charge is 100nC maximum at VGS=10V. Input capacitance is 4825pF typical, and switching times are 17ns turn-on delay and 10ns rise time. The MOSFET is avalanche rated at 726mJ single pulse. It operates over a junction temperature range of -55°C to 150°C with a junction-to-case thermal resistance of 1.5°C/W. The device is housed in an 8-PowerTDFN (8-PQFN 5x6) surface mount package and is RoHS compliant with MSL1 moisture sensitivity level. Typical applications include low-side switches for synchronous buck converters, secondary side synchronous rectifiers, point-of-load DC/DC converters, and ORing FETs or load switches.

FDMS8662 Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: FDMS8662 N-Channel PowerTrench MOSFET
Subcategory: Single N-Channel MOSFET

FDMS8662 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected

FDMS8662 Features

  • N-Channel PowerTrench MOSFET technology.
  • 30V drain-source voltage rating.
  • Low 2.0mΩ max on-resistance at 10V.
  • 49A continuous drain current (package limited).
  • RoHS compliant and MSL1 rated.

FDMS8662 Applications

  • Ideal for low-side synchronous buck converters.
  • Used in secondary side synchronous rectification.
  • Suitable for point-of-load DC/DC converters.
  • Functions as ORing FET or load switch.

FDMS8662 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the FDMS8662?

8-PowerTDFN (8-PQFN 5x6) surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FDMS8662 RoHS compliant?

Yes, RoHS compliant per datasheet.

What is the maximum drain-source voltage?

30V.

What is the typical on-resistance?

1.6 mΩ typical at VGS=10V, ID=28A.

What is the continuous drain current?

49A at TC=25°C (package limited), 159A (silicon limited), 28A at TA=25°C.

What is the gate threshold voltage?

1.0V min, 1.7V typ, 3.0V max at ID=250µA.

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