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FDMS8660S The FDMS8660S is an N-Channel PowerTrench SyncFET MOSFET from On Semiconductor rated for 30V drain-source voltage and 40A continuous drain current. It features a low 2.4mOhm maximum on-resistance at VGS=10V and comes in an 8-PowerTDFN (Power 56) surface-mount package.
Mfr Part #:

FDMS8660S

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDMS8660S is an N-Channel PowerTrench SyncFET MOSFET from On Semiconductor rated for 30V drain-source voltage and 40A continuous drain current. It features a low 2.4mOhm maximum on-resistance at VGS=10V and comes in an 8-PowerTDFN (Power 56) surface-mount package.
✓ Total Stock: 138,318 pcs
$ Price Range: $0.76 - $0.77

FDMS8660S Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
90,400 pcs
On Request
90400 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
47,855 pcs
On Request
47855 pcs On Request 1 On Request On Request 11+ On Request On Request
Hybrid Electronics ✓
Non-Authorised Inventory information
63 pcs
On Request
63 pcs On Request 1 On Request On Request NO DC On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDMS8660S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDMS8660S Description

Short technical summary and product information.

The FDMS8660S is an N-Channel PowerTrench SyncFET MOSFET designed for high-efficiency power conversion applications. It combines advanced silicon and package technologies to achieve a maximum drain-to-source on-resistance of 2.4mOhm at VGS=10V and ID=25A, and 3.5mOhm at VGS=4.5V and ID=21A. The device is rated for a maximum drain-to-source voltage of 30V and a continuous drain current of 40A at TC=25°C (package limited) or 147A (silicon limited).

 

The FDMS8660S features a monolithic Schottky body diode (SyncFET) that reduces switching losses and improves efficiency in synchronous rectification circuits. It offers a maximum pulsed drain current of 200A and a single pulse avalanche energy rating of 937mJ, making it suitable for demanding power switching environments. The device operates over a junction temperature range of -55°C to 150°C and is available in an 8-PowerTDFN (Power 56) surface-mount package with a supplier device package designation of 8-PQFN (5x6).

 

Typical applications include synchronous rectifiers for DC/DC converters, notebook Vcore and GPU low-side switches, networking point-of-load low-side switches, and telecom secondary-side rectification. The device is RoHS compliant and has an MSL 1 moisture sensitivity level, allowing unlimited floor life before reflow soldering.

FDMS8660S Quick Information

Product Type: MOSFET
Series: SyncFET
Canonical Name: FDMS8660S N-Channel PowerTrench SyncFET MOSFET
Subcategory: Single MOSFET

FDMS8660S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected

FDMS8660S Estimated Pricing

Qty Low High
3,000+ $0.77 $0.77
6,000+ $0.76 $0.76

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS8660S Features

  • Low 2.4mOhm maximum on-resistance at 10V.
  • Monolithic Schottky body diode for efficiency.
  • Rated for 30V drain-to-source voltage.
  • Supports 40A continuous drain current.
  • RoHS compliant with MSL 1 rating.

FDMS8660S Applications

  • Synchronous rectifier for DC/DC converters.
  • Notebook Vcore and GPU low-side switch.
  • Networking point-of-load low-side switch.
  • Telecom secondary side rectification.

FDMS8660S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDMS8660S?

The FDMS8660S has a maximum drain-to-source voltage (VDS) of 30V.

What is the maximum continuous drain current of the FDMS8660S?

The continuous drain current is 40A at TC=25°C (package limited) and 147A at TC=25°C (silicon limited). At TA=25°C, it is rated for 25A.

What is the on-resistance of the FDMS8660S?

The maximum on-resistance is 2.4mOhm at VGS=10V and ID=25A, and 3.5mOhm at VGS=4.5V and ID=21A. Typical values are 1.9mOhm and 2.6mOhm respectively.

What is the operating temperature range of the FDMS8660S?

The operating junction temperature range is -55°C to 150°C.

What package is the FDMS8660S available in?

The FDMS8660S is available in an 8-PowerTDFN package, also known as Power 56, with a supplier device package of 8-PQFN (5x6). It is a surface-mount package.

Is the FDMS8660S RoHS compliant?

Yes, the FDMS8660S is RoHS compliant and has an MSL 1 moisture sensitivity level.

What is the gate threshold voltage of the FDMS8660S?

The gate threshold voltage (Vgs(th)) is 1V minimum, 1.5V typical, and 2V maximum at Id=1mA. At Id=250µA, the maximum is 2V.

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