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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
47,855 pcs
|
47855 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
63 pcs
|
63 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Drain Current (ID) (Maximum @ TC=25 °C, silicon limited) | |
| Continuous Drain Current (ID) (Nominal @ Tc=25 °C (package limited) | |
| Current | |
| Drain to Source On Resistance (Rds(on)) (Typical/Maximum @ Vgs=10 V, Id=25 A) | |
| Drain to Source On Resistance (Rds(on)) (Typical/Maximum @ Vgs=10 V, Id=25 A, Tj=125 °C) | |
| Drain to Source On Resistance (Rds(on)) (Typical/Maximum @ Vgs=4.5 V, Id=21 A) | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Transconductance (gfs) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Resistance (Rg) (Typical/Maximum @ f=1 MHz) | |
| Gate Threshold Voltage (Vgs(th)) (Minimum/Typical/Maximum @ Id=1 mA) | |
| Gate-to-Source Leakage Current (IGSS) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Input Capacitance (Ciss) (Typical/Maximum @ Vds=15 V, f=1 MHz) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Coss) | |
| Power Dissipation (Max) | |
| Power Dissipation (PD) (Maximum @ TC=25 °C) | |
| Pulsed Drain Current (Idm) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance (Crss) | |
| Single Pulse Avalanche Energy (EAS) | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape and Reel | |
| Technology | |
| Thermal Resistance Junction to Ambient (RθJA) | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero-Gate-Voltage Drain Current (IDSS) |
The FDMS8660S is an N-Channel PowerTrench SyncFET MOSFET designed for high-efficiency power conversion applications. It combines advanced silicon and package technologies to achieve a maximum drain-to-source on-resistance of 2.4mOhm at VGS=10V and ID=25A, and 3.5mOhm at VGS=4.5V and ID=21A. The device is rated for a maximum drain-to-source voltage of 30V and a continuous drain current of 40A at TC=25°C (package limited) or 147A (silicon limited).
The FDMS8660S features a monolithic Schottky body diode (SyncFET) that reduces switching losses and improves efficiency in synchronous rectification circuits. It offers a maximum pulsed drain current of 200A and a single pulse avalanche energy rating of 937mJ, making it suitable for demanding power switching environments. The device operates over a junction temperature range of -55°C to 150°C and is available in an 8-PowerTDFN (Power 56) surface-mount package with a supplier device package designation of 8-PQFN (5x6).
Typical applications include synchronous rectifiers for DC/DC converters, notebook Vcore and GPU low-side switches, networking point-of-load low-side switches, and telecom secondary-side rectification. The device is RoHS compliant and has an MSL 1 moisture sensitivity level, allowing unlimited floor life before reflow soldering.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.77 | $0.77 |
| 6,000+ | $0.76 | $0.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDMS8660S has a maximum drain-to-source voltage (VDS) of 30V.
The continuous drain current is 40A at TC=25°C (package limited) and 147A at TC=25°C (silicon limited). At TA=25°C, it is rated for 25A.
The maximum on-resistance is 2.4mOhm at VGS=10V and ID=25A, and 3.5mOhm at VGS=4.5V and ID=21A. Typical values are 1.9mOhm and 2.6mOhm respectively.
The operating junction temperature range is -55°C to 150°C.
The FDMS8660S is available in an 8-PowerTDFN package, also known as Power 56, with a supplier device package of 8-PQFN (5x6). It is a surface-mount package.
Yes, the FDMS8660S is RoHS compliant and has an MSL 1 moisture sensitivity level.
The gate threshold voltage (Vgs(th)) is 1V minimum, 1.5V typical, and 2V maximum at Id=1mA. At Id=250µA, the maximum is 2V.