| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,737 pcs
|
11737 pcs | On Request | 1 | On Request | On Request | 1049+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS8660AS is an N-Channel PowerTrench SyncFET MOSFET manufactured by On Semiconductor. It is designed for power conversion applications, particularly as a synchronous rectifier in DC/DC converters. The device is rated for a drain-source voltage of 30V and a continuous drain current of 28A at 25°C ambient (49A at case temperature). The maximum on-resistance is 2.1 mΩ at VGS=10V and ID=28A, with a typical value of 1.7 mΩ. The gate threshold voltage is a maximum of 3V at 1mA drain current. The device features a monolithic Schottky body diode for improved efficiency. It is packaged in an 8-PowerTDFN (8-PQFN 5x6) surface mount package, rated for MSL1 and RoHS compliant. The operating junction temperature range is -55°C to 150°C. Typical applications include notebook Vcore/GPU low-side switches, networking point-of-load low-side switches, and telecom secondary-side rectification.
| Qty | Low | High |
|---|---|---|
| 216+ | $1.39 | $1.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
8-PowerTDFN (8-PQFN 5x6)
-55°C to 150°C
Yes, RoHS3 compliant per datasheet.
28A at 25°C ambient, 49A at 25°C case.
2.1 mΩ max, 1.7 mΩ typical.
3V maximum at Id=1mA.