| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
FDMS86581-F085 is an N-channel enhancement-mode MOSFET manufactured by On Semiconductor. It is rated for a maximum drain-to-source voltage of 60 V and a continuous drain current of 30 A at case temperature. The device features a low maximum on-resistance of 15 mΩ at Vgs = 10 V and Id = 30 A, making it suitable for power switching applications.
The MOSFET offers a total gate charge of 19 nC at Vgs = 10 V and a maximum input capacitance of 881 pF at Vds = 30 V. The maximum gate threshold voltage is 4 V at Id = 250 µA, and the gate-source voltage range is ±20 V. Maximum power dissipation is rated at 50 W at junction temperature, and the operating junction temperature range is -55°C to 175°C.
This device is supplied in a surface-mount 8-PowerTDFN package, also identified as 8-PQFN with a 5x6 mm footprint. The compact package supports high-density PCB layouts. The part is suited for power management circuits, including load switching and power conversion stages.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.36 | $0.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60 V.
It is available in an 8-PowerTDFN package, also known as 8-PQFN (5x6).
The operating junction temperature range is -55°C to 175°C.
Per existing product data, the part is marked as RoHS3 compliant.
The continuous drain current is 30 A at case temperature.
The maximum on-resistance is 15 mΩ at Vgs = 10 V and Id = 30 A.
The total gate charge is 19 nC at Vgs = 10 V.