| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,000 pcs
|
33000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS86580-F085 is an N-Channel MOSFET from ON Semiconductor designed for high-efficiency power switching applications. It features a maximum drain-source voltage of 60V and continuous drain current of 50A.
Electrical characteristics include a low on-resistance of 9.6mOhm (max) at 50A and 10V gate drive, with a typical value of 7.9mOhm. Gate charge is 30nC at 10V, enabling fast switching. Input capacitance is 1430pF at 30V. Gate threshold voltage is 4.2V max at 250µA.
The device is housed in a surface mount 8-PowerVDFN (Power56) package. Maximum power dissipation is 75W, and it operates over a temperature range of -55°C to 175°C. This MOSFET is suitable for a variety of power switching applications requiring high efficiency and compact packaging.
| Qty | Low | High |
|---|---|---|
| 100+ | $5.39 | $5.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
8-PowerVDFN (Power56).
-55°C to 175°C.
RoHS3 compliant (unverified).
50A.
7.9mOhm at 50A, 10V.
30nC at 10V.