| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,000 pcs
|
21000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS86569-F085 is an N-Channel power MOSFET manufactured by On Semiconductor. It features a maximum drain-source voltage of 60V and a continuous drain current of 65A. The device offers a low on-resistance of 5.6 milliohms at 10V gate drive, enabling high efficiency in power switching applications.
The MOSFET is housed in an 8-PowerVDFN surface mount package, also known as Power56, which provides excellent thermal performance. The operating junction temperature range is -55°C to 175°C, making it suitable for demanding environments. Gate charge is 54 nC and input capacitance is 2560 pF, contributing to fast switching characteristics.
This component is designed for use in DC-DC converters, motor drives, and power management circuits, particularly in automotive and industrial applications where reliability and efficiency are critical. The device is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited).
8-PowerVDFN (Power56) surface mount package.
-55°C to 175°C (junction).
RoHS3 compliant (unverified).
Maximum 4V at 250µA drain current.
5.6 milliohms maximum at 65A and 10V gate drive.
54 nC at 10V gate-source voltage.
2560 pF at 30V drain-source voltage.