| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,040 pcs
|
1040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS86568-F085 is an N-Channel PowerTrench MOSFET from On Semiconductor, designed for high-efficiency power switching applications. It features a drain-source breakdown voltage of 60V and a continuous drain current of 80A at TC=25°C. The typical on-resistance is 2.6 mΩ at VGS=10V, with a maximum of 3.5 mΩ. Total gate charge is typically 55 nC, enabling fast switching. The device is qualified to AEC Q101 for automotive applications and is RoHS compliant.
Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, integrated starter/alternator, and primary switch for 12V systems. The MOSFET is capable of single-pulse avalanche energy up to 102 mJ. It operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 214W.
The FDMS86568-F085 is offered in a surface-mount Power56 package (8-PowerVDFN) with a standard reel quantity of 3000 units on a 13" reel with 12mm tape width. Thermal resistance junction-to-case is 0.7°C/W, and junction-to-ambient is 50°C/W when mounted on a 1 in² pad of 2oz copper.
60 V.
8-PowerVDFN (Power56).
-55°C to 175°C.
Yes, RoHS3 Compliant (unverified).
2.6 mΩ at VGS=10V, ID=80A.
2 V min, 3 V typ, 4 V max.
Yes, AEC Q101 qualified.