| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS86350ET80 is an N-Channel MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power switching applications. The device has a maximum drain-source voltage of 80V and can handle continuous drain currents of 25A at ambient temperature and 198A at case temperature. The on-resistance is specified at a maximum of 2.4mΩ when driven with a 10V gate-source voltage, enabling low conduction losses.
The MOSFET features a maximum gate charge of 155nC at 10V gate drive and an input capacitance of 8030pF at 40V drain-source voltageUTE. The gate threshold voltage is up to 4.5V at 250µA drain current, and the gate-source voltage rating is ±20V. The device can dissipate up to 3.3W at ambient temperature and 187W at case temperature, with an operating junction temperature range of -55°C to 175°C.
This MOSFET is offered in an 8-PowerTDFN surface-mount package, also known as 8-PQFN (5x6). The compact package is suitable for space-constrained PCB layouts. The device is intended for use in power conversion, load switching, and other applications requiring high current handling and low resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.27 | $7.27 |
| 10+ | $4.77 | $4.77 |
| 100+ | $3.91 | $3.91 |
| 500+ | $3.81 | $3.81 |
| 1,000+ | $3.54 | $3.54 |
| 3,000+ | $3.13 | $3.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80V.
The maximum continuous drain current is 25A at ambient temperature and 198A at case temperature.
The maximum on-resistance is 2.4mΩ at a drain current of 25A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 175°C.
The package is 8-PowerTDFN, also known as 8-PQFN (5x6), for surface mount mounting.
The part is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.