| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
74,000 pcs
|
74000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
11,370 pcs
|
11370 pcs | On Request | 1 | On Request | On Request | 22+21+ | On Request | On Request | |
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,987 pcs
|
6987 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
FDMS86350 is an N-Channel power MOSFET manufactured by onsemi using the PowerTrench process. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is rated for a maximum drain-to-source voltage of 80 V and a maximum gate-to-source voltage of ±20 V. Continuous drain current is 130 A at a case temperature of 25°C and 25 A at an ambient temperature of 25°C, with a pulsed drain current rating of 300 A.
The MOSFET features low on-resistance of 2.4 mΩ maximum at VGS = 10 V and ID = 25 A, and 3.2 mΩ maximum at VGS = 8 V and ID = 22 A. Gate threshold voltage ranges from 2.5 V minimum to 4.5 V maximum. The device has a maximum input capacitance of 10680 pF and a maximum total gate charge of 155 nC at VGS = 10 V.
The FDMS86350 is housed in an 8-PowerTDFN package, also designated as an 8-PQFN (5x6) supplier device package, and is intended for surface-mount assembly. It supports a maximum power dissipation of 156 W at case temperature 25°C and 2.7 W at ambient temperature 25°C. Thermal resistance from junction to case is 0.8 °C/W, and from junction to ambient is 45 °C/W. The device operates over a junction temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.92 | $5.92 |
| 10+ | $3.88 | $3.88 |
| 100+ | $2.89 | $2.89 |
| 3,000+ | $2.89 | $2.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 80 V.
It is available in an 8-PowerTDFN surface-mount package, also designated as 8-PQFN (5x6).
The operating junction temperature range is -55°C to +150°C.
The existing database lists it as RoHS3 compliant, and the datasheet states 'RoHS Compliant' and 'Halogen Free'. Note this is unverified data with low confidence.
Continuous drain current is 130 A at Tc=25°C and 25 A at Ta=25°C (Note 1a).
The drain-to-source on-resistance is 2.0 mΩ typical and 2.4 mΩ maximum at VGS = 10 V, ID = 25 A.
Total gate charge (Qg) is a maximum of 155 nC at VGS = 10 V.