FDMS86320 N-Channel MOSFET with 80V drain-source breakdown voltage, 22A continuous drain current (Tc), and low on-resistance of 11.7mOhm. Surface mount package 8-PowerTDFN (8-PQFN 5x6).
Mfr Part #:

FDMS86320

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 80V drain-source breakdown voltage, 22A continuous drain current (Tc), and low on-resistance of 11.7mOhm. Surface mount package 8-PowerTDFN (8-PQFN 5x6).
✓ Total Stock: 1,056 pcs
$ Price Range: $0.74 - $2.74

FDMS86320 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,056 pcs
1056 pcs On Request 1 On Request On Request 16+ On Request On Request

FDMS86320 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS86320 Description

Short technical summary and product information.

The FDMS86320 is an N-Channel MOSFET from ON Semiconductor, designed for power management applications. It features a drain-source breakdown voltage of 80V and can handle continuous drain current up to 22A at case temperature (Tc) and 10.5A at ambient temperature (Ta). The device offers a low maximum on-resistance of 11.7mOhm at Vgs=10V and Id=10.5A.

 

The MOSFET has a maximum gate threshold voltage of 4.5V at Id=250µA and a maximum gate charge of 41nC at Vgs=10V. Input capacitance is 2640pF at Vds=40V. The device is rated for a maximum power dissipation of 69W at case temperature and 2.5W at ambient temperature. Operating junction temperature range is -55°C to 150°C.

 

The FDMS86320 is housed in an 8-PowerTDFN surface mount package, also known as 8-PQFN (5x6). This compact package is suitable for space-constrained designs requiring efficient thermal management. The device is RoHS3 compliant and REACH unaffected (unverified). It is commonly used in power supply circuits, DC-DC converters, and motor control applications.

FDMS86320 Quick Information

Product Type: Single MOSFET
Series: PowerTrench
Canonical Name: N-Channel MOSFET, 80V, 22A, 8-PQFN (5x6)
Subcategory: N-Channel MOSFET

FDMS86320 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMS86320 Estimated Pricing

Qty Low High
1+ $2.74 $2.74
10+ $1.77 $1.77
100+ $1.22 $1.22
500+ $0.97 $0.97
1,000+ $0.91 $0.91
3,000+ $0.75 $0.75
6,000+ $0.74 $0.74

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS86320 Features

  • N-Channel MOSFET with 80V drain-source rating.
  • Continuous drain current up to 22A at case temperature.
  • Low on-resistance of 11.7mOhm at 10V gate drive.
  • Surface mount 8-PQFN (5x6) package.
  • Operating junction temperature range -55°C to 150°C.

FDMS86320 Applications

  • Used in power supply and DC-DC converter circuits.
  • Suitable for motor control and load switching.
  • Ideal for power management in industrial electronics.

FDMS86320 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the FDMS86320?

8-PowerTDFN (8-PQFN 5x6) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FDMS86320 RoHS compliant?

RoHS3 Compliant (unverified).

What is the drain-source breakdown voltage?

80V.

What is the maximum drain current?

22A at case temperature (Tc), 10.5A at ambient temperature (Ta).

What is the on-resistance?

11.7mOhm maximum at Vgs=10V, Id=10.5A.

What is the gate threshold voltage?

4.5V maximum at Id=250µA.

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